Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures

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dc.contributor.author Murphy-Armando, Felipe
dc.contributor.author Fahy, Stephen B.
dc.date.accessioned 2016-06-02T15:05:22Z
dc.date.available 2016-06-02T15:05:22Z
dc.date.issued 2011-06-02
dc.identifier.citation MURPHY-ARMANDO, F. & FAHY, S. B. 2011. Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures. Journal of Applied Physics, 109, 113703. doi:10.1063/1.3590334 en
dc.identifier.volume 109 en
dc.identifier.startpage 113703-1 en
dc.identifier.endpage 113703-5 en
dc.identifier.issn 1089-7550
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/2680
dc.identifier.doi 10.1063/1.3590334
dc.description.abstract First-principles electronic structure methods are used to predict the rate of n-type carrier scattering due to phonons in highly-strained Ge. We show that strains achievable in nanoscale structures, where Ge becomes a direct bandgap semiconductor, cause the phonon-limited mobility to be enhanced by hundreds of times that of unstrained Ge, and over a thousand times that of Si. This makes highly tensile strained Ge a most promising material for the construction of channels in CMOS devices, as well as for Si-based photonic applications. Biaxial (001) strain achieves mobility enhancements of 100 to 1000 with strains over 2%. Low temperature mobility can be increased by even larger factors. Second order terms in the deformation potential of the Gamma valley are found to be important in this mobility enhancement. Although they are modified by shifts in the conduction band valleys, which are caused by carrier quantum confinement, these mobility enhancements persist in strained nanostructures down to sizes of 20 nm. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Institute of Physics Publishing en
dc.relation.uri http://scitation.aip.org/content/aip/journal/jap/109/11/10.1063/1.3590334
dc.rights © 2011, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Journal of Applied Physics, 109, 113703. (2011) and may be found at http://scitation.aip.org/content/aip/journal/jap/109/11/10.1063/1.3590334 en
dc.subject Phonons en
dc.subject Ab initio calculations en
dc.subject Nanostructured materials en
dc.subject Carrier mobility en
dc.subject Elemental semiconductors en
dc.subject Germanium en
dc.subject Conduction bands en
dc.title Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Felipe Murphy-Armando, Tyndall Theory Modelling & Design Centre, University College Cork, Cork, Ireland. +353-21-490-3000 Email: philip.murphy@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2013-02-20T12:31:06Z
dc.description.version Published Version en
dc.internal.rssid 198533803
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.copyrightchecked No en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress philip.murphy@tyndall.ie
dc.identifier.articleid 113703


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