Electrical properties of platinum interconnects deposited by electron beam induced deposition of the carbon-free precursor, Pt(PF3)4

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dc.contributor.author O'Regan, Colm
dc.contributor.author Lee, Angelica
dc.contributor.author Holmes, Justin D.
dc.contributor.author Petkov, Nikolay
dc.contributor.author Trompenaars, Piet
dc.contributor.author Mulders, Hans
dc.date.accessioned 2016-06-27T15:44:03Z
dc.date.available 2016-06-27T15:44:03Z
dc.date.issued 2013-03
dc.identifier.citation O'REGAN, C., LEE, A., HOLMES, J. D., PETKOV, N., TROMPENAARS, P. & MULDERS, H. 2013. Electrical properties of platinum interconnects deposited by electron beam induced deposition of the carbon-free precursor, Pt(PF3)4. Journal of Vacuum Science & Technology B, 31, 021807. doi: 10.1116/1.4794343 en
dc.identifier.volume 31 en
dc.identifier.issued 2 en
dc.identifier.startpage 021807-1 en
dc.identifier.endpage 021807-8 en
dc.identifier.issn 2166-2746
dc.identifier.issn 2166-2754
dc.identifier.uri http://hdl.handle.net/10468/2795
dc.identifier.doi 10.1116/1.4794343
dc.description.abstract Comprehensive analysis of the electrical properties, structure and composition of Pt interconnects, developed via mask-less, electron beam induced deposition of the carbon-free Pt precursor, Pt(PF3)4, is presented. The results demonstrate significantly improved electrical performance in comparison with that generated from the standard organometallic precursor, (CH3)3Pt(CpCH3). In particular, the Pt interconnects exhibited perfect ohmic behavior and resistivity that can be diminished to 0.24 × 10−3 Ω cm, which is only one order of magnitude higher than bulk Pt, in comparison to 0.2 Ω cm for the standard carbon-containing interconnects. A maximum current density of 1.87 × 107 A cm−2 was achieved for the carbon-free Pt, compared to 9.44 × 105 A cm−2 for the standard Pt precursor. The enhanced electrical properties of the as-deposited materials can be explained by the absence of large amounts of carbon impurities, and their further improvement by postdeposition annealing in N2. In-situ TEM heating experiments confirmed that the annealing step induces sintering of the Pt nanocrystals and improved crystallinity, which contributes to the enhanced electrical performance. Alternative annealing under reducing conditions resulted in improved performance of the standard Pt interconnects, while the carbon-free deposit suffered electrical and structural breakage due to formation of larger Pt islands en
dc.description.sponsorship Higher Education Authority (Program for Research in Third Level Institutions (2007-2011) via the INSPIRE programme); Science Foundation Ireland (09/SIRG/I1621 and 09/IN.1/I2602); Irish Research Council (09/SIRG/I1621 and 09/IN.1/I2602) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Institute of Physics Publishing en
dc.relation.uri http://scitation.aip.org/content/avs/journal/jvstb/31/2/10.1116/1.4794343
dc.rights © 2013 American Vacuum Society. All rights reserved. en
dc.subject Current density en
dc.subject Nanostructured materials en
dc.subject Interconnections en
dc.subject Sintering en
dc.subject Impurities en
dc.subject Platinum en
dc.subject EBIC en
dc.subject Annealing en
dc.title Electrical properties of platinum interconnects deposited by electron beam induced deposition of the carbon-free precursor, Pt(PF3)4 en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2013-03-07T20:37:47Z
dc.description.version Published Version en
dc.internal.rssid 200319666
dc.contributor.funder Higher Education Authority en
dc.contributor.funder Irish Research Council en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Vacuum Science and Technology B en
dc.internal.copyrightchecked No en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en

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