Resist-substrate interface tailoring for generating high density arrays of Ge and Bi2Se3 nanowires by electron beam lithography
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Hobbs, Richard G.
Bolger, Ciara T.
Georgiev, Yordan M.
Fleming, Peter G.
Morris, Michael A.
Holmes, Justin D.
Wang, Kang L.
American Institute of Physics Publishing
The authors report a chemical process to remove the native oxide on Ge and Bi2Se3 crystals, thus facilitating high-resolution electron beam lithography (EBL) on their surfaces using a hydrogen silsesquioxane (HSQ) resist. HSQ offers the highest resolution of all the commercially available EBL resists. However, aqueous HSQ developers such as NaOH and tetramethylammonium hydroxide have thus far prevented the fabrication of high-resolution structures via the direct application of HSQ to Ge and Bi2Se3, due to the solubility of components of their respective native oxides in these strong aqueous bases. Here we provide a route to the generation of ordered, high-resolution, high-density Ge and Bi2Se3 nanostructures with potential applications in microelectronics, thermoelectric, and photonics devices.
Nanofabrication , Electron beam lithography , Elemental semiconductors , Bismuth compounds , Nanowires , Germanium , Topological insulators , Resists , Nanolithography
HOBBS, R. G., SCHMIDT, M., BOLGER, C. T., GEORGIEV, Y. M., FLEMING, P., MORRIS, M. A., PETKOV, N., HOLMES, J. D., XIU, F., WANG, K. L., DJARA, V., YU, R. & COLINGE, J.-P. 2012. Resist–substrate interface tailoring for generating high-density arrays of Ge and Bi2Se3 nanowires by electron beam lithography. Journal of Vacuum Science & Technology B, 30, 041602(1)-041602(7). doi: 10.1116/1.4724302
© 2012 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Vacuum Science & Technology B, 30:4, 041602 (2012) and may be found at http://scitation.aip.org/content/avs/journal/jvstb/30/4/10.1116/1.4724302