Resist-substrate interface tailoring for generating high density arrays of Ge and Bi2Se3 nanowires by electron beam lithography

Show simple item record Hobbs, Richard G. Schmidt, Michael Bolger, Ciara T. Georgiev, Yordan M. Fleming, Peter G. Morris, Michael A. Petkov, Nikolay Holmes, Justin D. Xiu, Faxian Wang, Kang L. Djara, Vladimir Yu, Ran Colinge, Jean-Pierre 2016-06-28T14:25:13Z 2016-06-28T14:25:13Z 2012-06-06
dc.identifier.citation HOBBS, R. G., SCHMIDT, M., BOLGER, C. T., GEORGIEV, Y. M., FLEMING, P., MORRIS, M. A., PETKOV, N., HOLMES, J. D., XIU, F., WANG, K. L., DJARA, V., YU, R. & COLINGE, J.-P. 2012. Resist–substrate interface tailoring for generating high-density arrays of Ge and Bi2Se3 nanowires by electron beam lithography. Journal of Vacuum Science & Technology B, 30, 041602(1)-041602(7). doi: 10.1116/1.4724302 en
dc.identifier.volume 30 en
dc.identifier.issued 4 en
dc.identifier.startpage 041602(1) en
dc.identifier.endpage 041602(7) en
dc.identifier.issn 2166-2754
dc.identifier.issn 2166-2746
dc.identifier.doi 10.1116/1.4724302
dc.description.abstract The authors report a chemical process to remove the native oxide on Ge and Bi2Se3 crystals, thus facilitating high-resolution electron beam lithography (EBL) on their surfaces using a hydrogen silsesquioxane (HSQ) resist. HSQ offers the highest resolution of all the commercially available EBL resists. However, aqueous HSQ developers such as NaOH and tetramethylammonium hydroxide have thus far prevented the fabrication of high-resolution structures via the direct application of HSQ to Ge and Bi2Se3, due to the solubility of components of their respective native oxides in these strong aqueous bases. Here we provide a route to the generation of ordered, high-resolution, high-density Ge and Bi2Se3 nanostructures with potential applications in microelectronics, thermoelectric, and photonics devices.                          en
dc.description.sponsorship Irish Research Council for Science, Engineering and Technology (08/CE/I1432, 09/IN.1/I2602, and 09/SIRG/I1621); Science Foundation Ireland (08/CE/I1432, 09/IN.1/I2602, and 09/SIRG/I1621); Higher Education Authority (Program for Research in Third Level Institutions (2007-2011) via the INSPIRE program) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Institute of Physics Publishing en
dc.rights © 2012 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Vacuum Science & Technology B, 30:4, 041602 (2012) and may be found at en
dc.subject Nanofabrication en
dc.subject Electron beam lithography en
dc.subject Elemental semiconductors en
dc.subject Bismuth compounds en
dc.subject Nanowires en
dc.subject Germanium en
dc.subject Topological insulators en
dc.subject Resists en
dc.subject Nanolithography en
dc.title Resist-substrate interface tailoring for generating high density arrays of Ge and Bi2Se3 nanowires by electron beam lithography en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2013-03-07T20:42:56Z
dc.description.version Published Version en
dc.internal.rssid 147736421
dc.contributor.funder Higher Education Authority en
dc.contributor.funder Irish Research Council for Science Engineering and Technology en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Vacuum Science & Technology B en
dc.internal.copyrightchecked No en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.identifier.articleid 041602

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