Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices

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dc.contributor.author O'Dwyer, Colm
dc.contributor.author Szachowicz, Marta
dc.contributor.author Visimberga, Giuseppe
dc.contributor.author Lavayen, Vladimir
dc.contributor.author Newcomb, Simon B.
dc.contributor.author Sotomayor Torres, Clivia M.
dc.date.accessioned 2016-07-01T14:28:06Z
dc.date.available 2016-07-01T14:28:06Z
dc.date.issued 2009-02-01
dc.identifier.citation O'Dwyer, C., Szachowicz, M., Visimberga, G., Lavayen, V., Newcomb, S. B. and Sotomayor Torres, C. M. (2009) 'Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices', Nature Nanotechnology, 4, pp. 239-244. http://dx.doi.org/10.1038/nnano.2008.418 en
dc.identifier.volume 4 en
dc.identifier.startpage 239 en
dc.identifier.endpage 244 en
dc.identifier.issn 1748-3387
dc.identifier.uri http://hdl.handle.net/10468/2821
dc.identifier.doi 10.1038/nnano.2008.418
dc.description.abstract Thin layers of indium tin oxide are widely used as transparent coatings and electrodes in solar energy cells, flat-panel displays, antireflection coatings, radiation protection and lithium-ion battery materials, because they have the characteristics of low resistivity, strong absorption at ultraviolet wavelengths, high transmission in the visible, high reflectivity in the far-infrared and strong attenuation in the microwave region. However, there is often a trade-off between electrical conductivity and transparency at visible wavelengths for indium tin oxide and other transparent conducting oxides. Here, we report the growth of layers of indium tin oxide nanowires that show optimum electronic and photonic properties and demonstrate their use as fully transparent top contacts in the visible to near-infrared region for light-emitting devices. en
dc.description.sponsorship Science Foundation Ireland (SFI 02/IN.1/172); European Commission (EU Network of Excellence nanoPhotonics to Realise Molecular Scale Technologies, (PhOREMOST, FP6/2003/IST/2-511616); Programa Bicentenario de Cienca y Tecnologıa, Chile, (PCBT, ACT027); Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq), Brazil en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Nature Publishing Group en
dc.rights © 2009 Macmillan Publishers Limited. All rights reserved. en
dc.subject Nanotechnology en
dc.subject Nanowires en
dc.subject Indium tin oxide en
dc.subject Electron microscopy en
dc.subject Light emitting diode en
dc.title Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2012-11-29T17:46:48Z
dc.description.version Accepted Version en
dc.internal.rssid 162343177
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nature Nanotechnology en
dc.internal.copyrightchecked No. !!CORA!! Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en


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