Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices

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Date
2009-02-01
Authors
O'Dwyer, Colm
Szachowicz, Marta
Visimberga, Giuseppe
Lavayen, Vladimir
Newcomb, Simon B.
Sotomayor Torres, Clivia M.
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Nature Publishing Group
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Abstract
Thin layers of indium tin oxide are widely used as transparent coatings and electrodes in solar energy cells, flat-panel displays, antireflection coatings, radiation protection and lithium-ion battery materials, because they have the characteristics of low resistivity, strong absorption at ultraviolet wavelengths, high transmission in the visible, high reflectivity in the far-infrared and strong attenuation in the microwave region. However, there is often a trade-off between electrical conductivity and transparency at visible wavelengths for indium tin oxide and other transparent conducting oxides. Here, we report the growth of layers of indium tin oxide nanowires that show optimum electronic and photonic properties and demonstrate their use as fully transparent top contacts in the visible to near-infrared region for light-emitting devices.
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Keywords
Nanotechnology , Nanowires , Indium tin oxide , Electron microscopy , Light emitting diode
Citation
O'Dwyer, C., Szachowicz, M., Visimberga, G., Lavayen, V., Newcomb, S. B. and Sotomayor Torres, C. M. (2009) 'Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices', Nature Nanotechnology, 4, pp. 239-244. http://dx.doi.org/10.1038/nnano.2008.418
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© 2009 Macmillan Publishers Limited. All rights reserved.