Mechanism that dictates pore width and <111>a pore propagation in InP
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Accepted Version
Date
2012-03-15
Authors
Lynch, Robert P.
Quill, Nathan
O'Dwyer, Colm
Nakahara, Shohei
Buckley, D. Noel
Journal Title
Journal ISSN
Volume Title
Publisher
Electrochemical Society
Published Version
Abstract
We report a mechanism for pore growth and propagation based on a three-step charge transfer model. The study is supported by electron microscopy analysis of highly doped n-InP samples anodised in aqueous KOH. The model and experimental data are used to explain propagation of pores of characteristic diameter preferentially along the <111>A directions. We also show evidence for deviation of pore growth from the <111>A directions and explain why such deviations should occur. The model is self-consistent and predicts how carrier concentration affects the internal dimensions of the porous structures.
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Keywords
Nanotechnology , Electrochemical properties , Charge transfer model , Electron microscopy analysis , InP , Internal dimensions , Pore growth , Pore width , Porous structures
Citation
Lynch, R. P., Quill, N., O'Dwyer, C., Nakahara, S. and Buckley, D. N. (2012) 'Mechanism that dictates pore width and <111>a pore propagation in InP'. ECS Transactions, 50(6), pp. 319-334. http://ecst.ecsdl.org/content/50/6/319.abstract
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© The Electrochemical Society