Atomic nanolithography patterning of submicron features: writing an organic self-assembled monolayer with cold bright Cs atom beams

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dc.contributor.author O'Dwyer, Colm
dc.contributor.author Gay, G.
dc.contributor.author Viaris de Lesegno, B.
dc.contributor.author Weiner, J.
dc.contributor.author Camposeo, A.
dc.contributor.author Tantussi, F.
dc.contributor.author Fuso, F.
dc.contributor.author Allegrini, M.
dc.contributor.author Arimondo, E.
dc.date.accessioned 2016-07-08T10:53:53Z
dc.date.available 2016-07-08T10:53:53Z
dc.date.issued 2005-06-29
dc.identifier.citation O'Dwyer, C., Gay, G., ,de Lesegno, B. V., Weiner, J., Camposeo, A., Tantussi, F., Fuso, F., Allegrini, M. and Arimondo, E. (2005) 'Atomic nanolithography patterning of submicron features: writing an organic self-assembled monolayer with cold bright Cs atom beams'. Nanotechnology, 16(9), 1536. http://stacks.iop.org/0957-4484/16/i=9/a=022 en
dc.identifier.volume 16 en
dc.identifier.issued 9 en
dc.identifier.startpage 1536 en
dc.identifier.issn 0957-4484
dc.identifier.uri http://hdl.handle.net/10468/2845
dc.identifier.doi 10.1088/0957-4484/16/9/022
dc.description.abstract Cs atom beams, transversely collimated and cooled, passing through material masks in the form of arrays of reactive-ion-etched hollow Si pyramidal tips and optical masks formed by intense standing light waves, write submicron features on self-assembled monolayers (SAMs). Features with widths as narrow as 43 ± 6 nm and spatial resolution limited only by the grain boundaries of the substrate have been realized in SAMs of alkanethiols. The material masks write two-dimensional arrays of submicron holes; the optical masks result in parallel lines spaced by half the optical wavelength. Both types of feature are written to the substrate by exposure of the masked SAM to the Cs flux and a subsequent wet chemical etch. For the arrays of pyramidal tips, acting as passive shadow masks, the resolution and size of the resultant feature depends on the distance of the mask array from the SAM, an effect caused by the residual divergence of the Cs atom beam. The standing wave optical mask acts as an array of microlenses focusing the atom flux onto the substrate. Atom 'pencils' writing on SAMs have the potential to create arbitrary submicron figures in massively parallel arrays. The smallest features and highest resolutions were realized with SAMs grown on smooth, sputtered gold substrates. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.rights © 2005 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0957-4484/16/9/022. en
dc.subject Alcohols en
dc.subject Atomic beams en
dc.subject Cesium en
dc.subject Etching en
dc.subject Gold en
dc.subject Masks en
dc.subject Nanotechnology en
dc.subject Single crystals en
dc.subject Sputtering en
dc.subject Atom flux en
dc.subject Atomic nanolithography patterning en
dc.subject Optical diffraction limit en
dc.subject Self assembly en
dc.title Atomic nanolithography patterning of submicron features: writing an organic self-assembled monolayer with cold bright Cs atom beams en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2012-11-30T11:09:53Z
dc.description.version Accepted Version en
dc.internal.rssid 162343187
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nanotechnology en
dc.internal.copyrightchecked No.!!CORA!! Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en


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