Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

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dc.contributor.author Conroy, Michele
dc.contributor.author Li, Haoning
dc.contributor.author Kusch, Gunnar
dc.contributor.author Zhao, Chao
dc.contributor.author Ooi, Boon S.
dc.contributor.author Martin, Robert W.
dc.contributor.author Holmes, Justin D.
dc.contributor.author Parbrook, Peter J.
dc.date.accessioned 2016-07-14T08:43:47Z
dc.date.available 2016-07-14T08:43:47Z
dc.date.issued 2016-06
dc.identifier.citation Conroy, M., Li, H., Kusch, G., Zhao, C., Ooi, B., Martin, R.W., Holmes, J.D. and Parbrook, P.J. (2016) 'Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods', Nanoscale, 8(21), pp. 11019-11026. doi: 10.1039/c6nr00116e en
dc.identifier.volume 8 en
dc.identifier.issued 21 en
dc.identifier.startpage 11019 en
dc.identifier.endpage 11026 en
dc.identifier.issn 2040-3364
dc.identifier.uri http://hdl.handle.net/10468/2874
dc.identifier.doi 10.1039/c6nr00116e
dc.description.abstract We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates. en
dc.description.sponsorship Higher Education Authority (Programme for Research in Third Level Institutions Cycles 4 and 5 - INSPIRE and TYFFANI projects; INSPIRE PhD research scholarship); Science Foundation Ireland (SFI Grant No. SFI/10/IN.1/I2993; SFI Engineering Professorship scheme 07/EN/E001A); European Commission (European Regional Development Fund); Engineering and Physical Sciences Research Council, United Kingdom (EP/M003132/1) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher The Royal Society of Chemistry en
dc.rights © 2016, the Authors. This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Nanoscale, published by the Royal Society of Chemistry, after peer review. To access the final edited and published work see http://dx.doi.org/10.1039/C6NR00116E en
dc.subject Nitrides en
dc.subject Nanorods en
dc.subject STEM en
dc.subject EDX en
dc.subject MOCVD en
dc.subject InGaN en
dc.title Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2016-07-08T10:51:51Z
dc.description.version Submitted Version en
dc.internal.rssid 355156651
dc.contributor.funder Higher Education Authority en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder European Commission
dc.contributor.funder Engineering and Physical Sciences Research Council
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nanoscale en
dc.internal.copyrightchecked No en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en


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