Less strain, more gain_nano_patterning III-N thin films

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dc.contributor.advisor Holmes, Justin D. en
dc.contributor.advisor Parbrook, Peter James en
dc.contributor.author Conroy, Michele
dc.date.accessioned 2016-07-15T11:32:45Z
dc.date.available 2016-07-15T11:32:45Z
dc.date.issued 2016
dc.date.submitted 2016
dc.identifier.citation Conroy, M. 2016. Less strain, more gain_nano_patterning III-N thin films. PhD Thesis, University College Cork. en
dc.identifier.uri http://hdl.handle.net/10468/2889
dc.description.abstract Controlling the growth mechanism for nano-structures is one of the most critical topics in material science. In the past 10 years there has been intensive research worldwide in IIIN based nanowires for its many unique photonic and electrical properties at this scale. There are several advantages to nanostructuring III-N materials, including increased light extraction, increased device efficiency, reduction of efficiency droop, and reduction in crystallographic defect density. High defect densities that normally plague III-N materials and reduce the device efficiency are not an issue for nano-structured devices such as LEDs, due to the effective strain relaxation. Additionally regions of the light spectrum such as green and yellow, once found difficult to achieve in bulk planar LEDs, can be produced by manipulating the confinement and crystal facet growth directions of the active regions. A cheap and easily repeatable self-assembly nano-patterning technique at wafer scale was designed during this thesis for top down production of III-N nanowires. Through annealing under ammonia and N2 gas flow, the first reported dislocation defect bending was observed in III-N nanorods by in-situ transmission electron microscopy heating. By growing on these etched top down nanorods as a template, ultra-dense nanowires with apex tipped semi-polar tops were produced. The uniform spacing of 5nm between each wire is the highest reported space-filling factor at 98%. Finally by using these ultra-dense nanorods bridging the green gap of the light spectrum was possible, producing the first reported red, yellow, green light emission from a single nano-tip. en
dc.description.sponsorship Science Foundation Ireland (SFI/10/IN.1/I2993.) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher University College Cork en
dc.rights © 2016, Michele Conroy. en
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/ en
dc.subject Semiconductor en
dc.title Less strain, more gain_nano_patterning III-N thin films en
dc.type Doctoral thesis en
dc.type.qualificationlevel Doctoral Degree (Structured) en
dc.type.qualificationname PHD (Engineering) en
dc.internal.availability Full text not available en
dc.check.info The full text of this thesis is unavailable due to a restriction requested by the author. en
dc.check.date 10000-01-01
dc.description.version Accepted Version
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder INSPIRE en
dc.description.status Not peer reviewed en
dc.internal.school Chemistry en
dc.internal.school Electrical and Electronic Engineering en
dc.check.reason This thesis is due for publication or the author is actively seeking to publish this material en
dc.check.opt-out Yes en
dc.thesis.opt-out true
dc.check.entireThesis Entire Thesis Restricted
dc.check.embargoformat E-thesis on CORA only en
dc.internal.conferring Summer 2016 en


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© 2016, Michele Conroy. Except where otherwise noted, this item's license is described as © 2016, Michele Conroy.
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