Atomic vapor deposition of bismuth titanate thin films

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dc.contributor.author Deepak, Nitin
dc.contributor.author Zhang, Panfeng F.
dc.contributor.author Keeney, Lynette
dc.contributor.author Pemble, Martyn E.
dc.contributor.author Whatmore, Roger W.
dc.date.accessioned 2016-07-22T14:40:29Z
dc.date.available 2016-07-22T14:40:29Z
dc.date.issued 2013-05-08
dc.identifier.citation Deepak, N., Zhang, P. F., Keeney, L., Pemble, M. E. and Whatmore, R. W. (2013) 'Atomic vapor deposition of bismuth titanate thin films'. Journal of Applied Physics, 113, 187207. http://scitation.aip.org/content/aip/journal/jap/113/18/10.1063/1.4801985 en
dc.identifier.volume 113 en
dc.identifier.startpage 187207-1 en
dc.identifier.endpage 187207-7 en
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.uri http://hdl.handle.net/10468/2931
dc.identifier.doi 10.1063/1.4801985
dc.description.abstract c-axis oriented ferroelectric bismuth titanate (Bi4Ti 3O12) thin films were grown on (001) strontium titanate (SrTiO3) substrates by an atomic vapor deposition technique. The ferroelectric properties of the thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data and transmission electron microscopy analysis demonstrated the presence of out-of-phase boundaries (OPBs). It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films. Piezo-responses of the thin films were measured by piezo-force microscopy. It is found that the in-plane piezoresponse is stronger than the out-of-plane response, due to the strong c-axis orientation of the films. en
dc.description.sponsorship International Centre for Graduate Education in micro and nano Engineering (ICGEE), (Ph.D funding); Science Foundation Ireland (SFI FORME Strategic Research Cluster Award No. 07/SRC/I1172); Higher Education Authority (Program for Research in Third Level Institutions (2007-2011) via the INSPIRE program.) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2013 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in J. Appl. Phys. 113, 187207 (2013) and may be found at http://scitation.aip.org/content/aip/journal/jap/113/18/10.1063/1.4801985 en
dc.subject Microscopy en
dc.subject Bi4Ti 3O12 en
dc.subject Transmission electron microscopy en
dc.subject Atomic vapor deposition en
dc.subject Thin film growth en
dc.subject Bismuth en
dc.subject Titanium en
dc.subject Atomic force microscopy en
dc.title Atomic vapor deposition of bismuth titanate thin films en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Lynette Keeney, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: lynette.keeney@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2014-09-03T10:29:09Z
dc.description.version Published Version en
dc.internal.rssid 243941847
dc.internal.wokid 000319294100113
dc.contributor.funder Higher Education Authority en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder International Centre for Graduate Education in Micro and Nano Engineering (ICGEE) en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.copyrightchecked No. !!CORA!! Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress lynette.keeney@tyndall.ie en
dc.identifier.articleid 187207


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