Chemical approaches for doping nanodevice architectures

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dc.contributor.author O'Connell, John
dc.contributor.author Biswas, Subhajit
dc.contributor.author Duffy, Ray
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2016-08-03T11:54:32Z
dc.date.available 2016-08-03T11:54:32Z
dc.date.issued 2016-07-15
dc.identifier.citation O'Connell, J., Biswas, S., Duffy, R. and Holmes, J.D. (2016) 'Chemical approaches for doping nanodevice architectures', Nanotechnology, 27(34), pp. 342002(1)-342002(19). doi:10.1088/0957-4484/27/34/342002 en
dc.identifier.volume 27 en
dc.identifier.issued 34 en
dc.identifier.startpage 342002(1) en
dc.identifier.endpage 342002(19) en
dc.identifier.issn 0957-4484
dc.identifier.uri http://hdl.handle.net/10468/2959
dc.identifier.doi 10.1088/0957-4484/27/34/342002
dc.description.abstract Advanced doping technologies are key for the continued scaling of semiconductor devices and the maintenance of device performance beyond the 14 nm technology node. Due to limitations of conventional ion-beam implantation with thin body and 3D device geometries, techniques which allow precise control over dopant diffusion and concentration, in addition to excellent conformality on 3D device surfaces, are required. Spin-on doping has shown promise as a conventional technique for doping new materials, particularly through application with other dopant methods, but may not be suitable for conformal doping of nanostructures. Additionally, residues remain after most spin-on-doping processes which are often difficult to remove. In-situ doping of nanostructures is especially common for bottom-up grown nanostructures but problems associated with concentration gradients and morphology changes are commonly experienced. Monolayer doping (MLD) has been shown to satisfy the requirements for extended defect-free, conformal and controllable doping on many materials ranging from traditional silicon and germanium devices to emerging replacement materials such as III-V compounds but challenges still remain, especially with regard to metrology and surface chemistry at such small feature sizes. This article summarises and critically assesses developments over the last number of years regarding the application of gas and solution phase techniques to dope silicon-, germanium- and III-V-based materials and nanostructures to obtain shallow diffusion depths coupled with high carrier concentrations and abrupt junctions. en
dc.description.sponsorship Science Foundation Ireland (SFI Grant: 09/IN.1/I2602) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing Ltd. en
dc.rights © 2016 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://stacks.iop.org/0957-4484/27/i=34/a=342002 en
dc.subject Monolayer en
dc.subject Doping en
dc.subject Ultra-shallow junction en
dc.subject Abrupt en
dc.subject MLD en
dc.subject Chemical doping en
dc.subject Silicon en
dc.subject Germanium en
dc.subject InGaAs en
dc.title Chemical approaches for doping nanodevice architectures en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text not available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher en
dc.check.date 2017-07-15
dc.date.updated 2016-08-02T09:49:44Z
dc.description.version Accepted Version en
dc.internal.rssid 358591390
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nanotechnology en
dc.internal.copyrightchecked No en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en


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