Role of substrate quality on the performance of semipolar (11 2 - 2) InGaN light-emitting diodes
Dinh, Duc V.; Corbett, Brian M.; Parbrook, Peter J.; Koslow, Ingrid. L.; Rychetsky, Monir; Guttmann, Martin; Wernicke, Tim; Kneissl, Michael; Mounir, Christian; Schwarz, Ulrich; Glaab, Johannes; Netzel, Carsten; Brunner, Frank; Weyers, Markus
Date:
2016-10-03
Copyright:
© 2016, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in J. Appl. Phys. 120, 135701 (2016) and may be found at http://scitation.aip.org/content/aip/journal/jap/120/13/10.1063/1.4963757
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Access to this article is restricted until 12 months after publication by the request of the publisher.
Restriction lift date:
2017-10-03
Citation:
Dinh, D. V., Corbett, B., Parbrook, P. J., Koslow, I. L., Rychetsky, M., Guttmann, M., Wernicke, T., Kneissl, M., Mounir, C., Schwarz, U., Glaab, J., Netzel, C., Brunner, F. and Weyers, M. (2016) ‘Role of substrate quality on the performance of semipolar (11 2 - 2) InGaN light-emitting diodes’, Journal of Applied Physics, 120, 135701 (7pp). doi: 10.1063/1.4963757
Abstract:
We compare the optical properties and device performance of unpackaged InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) emitting at ∼430 nm grown simultaneously on a high-cost small-size bulk semipolar (11 2 - 2) GaN substrate (Bulk-GaN) and a low-cost large-size (11 2 - 2) GaN template created on patterned (10 1 - 2) r-plane sapphire substrate (PSS-GaN). The Bulk-GaN substrate has the threading dislocation density (TDD) of ∼ and basal-plane stacking fault (BSF) density of 0 cm-1, while the PSS-GaN substrate has the TDD of ∼2 × 108cm-2 and BSF density of ∼1 × 103cm-1. Despite an enhanced light extraction efficiency, the LED grown on PSS-GaN has two-times lower internal quantum efficiency than the LED grown on Bulk-GaN as determined by photoluminescence measurements. The LED grown on PSS-GaN substrate also has about two-times lower output power compared to the LED grown on Bulk-GaN substrate. This lower output power was attributed to the higher TDD and BSF density.
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