Role of substrate quality on the performance of semipolar (11 2 - 2) InGaN light-emitting diodes

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dc.contributor.author Dinh, Duc V.
dc.contributor.author Corbett, Brian M.
dc.contributor.author Parbrook, Peter J.
dc.contributor.author Koslow, Ingrid. L.
dc.contributor.author Rychetsky, Monir
dc.contributor.author Guttmann, Martin
dc.contributor.author Wernicke, Tim
dc.contributor.author Kneissl, Michael
dc.contributor.author Mounir, Christian
dc.contributor.author Schwarz, Ulrich
dc.contributor.author Glaab, Johannes
dc.contributor.author Netzel, Carsten
dc.contributor.author Brunner, Frank
dc.contributor.author Weyers, Markus
dc.date.accessioned 2016-10-27T11:57:10Z
dc.date.available 2016-10-27T11:57:10Z
dc.date.issued 2016-10-03
dc.identifier.citation Dinh, D. V., Corbett, B., Parbrook, P. J., Koslow, I. L., Rychetsky, M., Guttmann, M., Wernicke, T., Kneissl, M., Mounir, C., Schwarz, U., Glaab, J., Netzel, C., Brunner, F. and Weyers, M. (2016) ‘Role of substrate quality on the performance of semipolar (11 2 - 2) InGaN light-emitting diodes’, Journal of Applied Physics, 120, 135701 (7pp). doi: 10.1063/1.4963757 en
dc.identifier.volume 120 en
dc.identifier.startpage 135701-1 en
dc.identifier.endpage 135701-7 en
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/3221
dc.identifier.doi 10.1063/1.4963757
dc.description.abstract We compare the optical properties and device performance of unpackaged InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) emitting at ∼430 nm grown simultaneously on a high-cost small-size bulk semipolar (11 2 - 2) GaN substrate (Bulk-GaN) and a low-cost large-size (11 2 - 2) GaN template created on patterned (10 1 - 2) r-plane sapphire substrate (PSS-GaN). The Bulk-GaN substrate has the threading dislocation density (TDD) of ∼ and basal-plane stacking fault (BSF) density of 0 cm-1, while the PSS-GaN substrate has the TDD of ∼2 × 108cm-2 and BSF density of ∼1 × 103cm-1. Despite an enhanced light extraction efficiency, the LED grown on PSS-GaN has two-times lower internal quantum efficiency than the LED grown on Bulk-GaN as determined by photoluminescence measurements. The LED grown on PSS-GaN substrate also has about two-times lower output power compared to the LED grown on Bulk-GaN substrate. This lower output power was attributed to the higher TDD and BSF density. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2016, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in J. Appl. Phys. 120, 135701 (2016) and may be found at http://scitation.aip.org/content/aip/journal/jap/120/13/10.1063/1.4963757 en
dc.subject Light emitting diodes en
dc.subject Photoluminescence en
dc.subject Quantum wells en
dc.subject III-V semiconductors en
dc.subject Sapphire en
dc.title Role of substrate quality on the performance of semipolar (11 2 - 2) InGaN light-emitting diodes en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Duc V. Dinh, Tyndall Photonics, University College Cork, Cork, Ireland. T: 353214903000. E: duc.vn.dinh@gmail.com en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by the request of the publisher. en
dc.check.date 2017-10-03
dc.description.version Published Version en
dc.contributor.funder Seventh Framework Programme en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.copyrightchecked Dinh, D. V., Corbett, B., Parbrook, P. J., Koslow, I. L., Rychetsky, M., Guttmann, M., Wernicke, T., Kneissl, M., Mounir, C., Schwarz, U., Glaab, J., Netzel, C., Brunner, F. and Weyers, M. (2016) ‘Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes’, Journal of Applied Physics, 120, 135701 (7pp). doi: 10.1063/1.4963757 en
dc.internal.IRISemailaddress duc.vn.dinh@gmail.com en
dc.identifier.articleid 135701
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::NMP/280587/EU/AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications/ALIGHT en


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