Long, Brenda; Verni, Giuseppe A.; O'Connell, John; Holmes, Justin D.; Shayesteh, Maryam; O'Connell, Dan; Duffy, Ray
(IEEE, 2014-06)
This work describes a non-destructive method to introduce impurity atoms into silicon (Si) and germanium (Ge) using Molecular Layer Doping (MLD). Molecules containing dopant atoms (arsenic) were designed, synthesized and ...