Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates

Show simple item record

dc.contributor.author Loi, Ruggero
dc.contributor.author O'Callaghan, James
dc.contributor.author Roycroft, Brendan
dc.contributor.author Robert, Cedric
dc.contributor.author Fecioru, Alin
dc.contributor.author Trindade, António José
dc.contributor.author Gocalińska, Agnieszka M.
dc.contributor.author Bower, Christopher A.
dc.contributor.author Corbett, Brian M.
dc.date.accessioned 2017-01-19T09:33:25Z
dc.date.available 2017-01-19T09:33:25Z
dc.date.issued 2016-11-11
dc.identifier.citation Loi, R., Callaghan, J. O., Roycroft, B., Robert, C., Fecioru, A., Trindade, A. J., Gocalinska, A., Pelucchi, E., Bower, C. A. and Corbett, B. (2016) ' Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates', IEEE Photonics Journal, 8(6), pp. 1-10. doi:10.1109/JPHOT.2016.2627883 en
dc.identifier.volume 8 en
dc.identifier.issued 6 en
dc.identifier.startpage 1504810-1 en
dc.identifier.endpage 1504810-11 en
dc.identifier.issn 1943-0655
dc.identifier.uri http://hdl.handle.net/10468/3477
dc.identifier.doi 10.1109/JPHOT.2016.2627883
dc.description.abstract InP-etched facet ridge lasers emitting in the optical C-band are heterogeneously integrated on Si substrates by microtransfer printing for the first time. 500 μm × 60 μm laser coupons are fabricated with a highly dense pitch on the native InP substrate. The laser epitaxial structure contains a 1-μm-thick InGaAs sacrificial layer. A resist anchoring system is used to restrain the devices while they are released by selectively etching the InGaAs layer with FeCl3:H2O (1:2) at 8 °C. Efficient thermal sinking is achieved by evaporating Ti-Au on the Si target substrate and annealing the printed devices at 300 °C. This integration strategy is particularly relevant for lasers being butt coupled to polymer or silicon-on-insulator (SOI) waveguides. en
dc.description.sponsorship Science Foundation Ireland (SFI under Irish Photonic Integration Centre Award 12/RC/2276); Irish Higher Education Authority (HEA Program for Research in Third Level Institutions (2007–2011) via the INSPIRE program) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IEEE en
dc.rights © 2016 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications_standards/publications/rights/index.html for more information. en
dc.subject Fabrication and characterization en
dc.subject Heterogeneous integration en
dc.subject Optical device en
dc.subject Infrared lasers en
dc.subject Photonic materials en
dc.subject Engineered photonic structures en
dc.subject Substrates en
dc.subject III-V semiconductor materials en
dc.subject Indium phosphide en
dc.subject Waveguide lasers en
dc.subject Indium gallium arsenide en
dc.title Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Ruggero Loi, Photonics Centre, Tyndall National Institute, University College Cork, Cork, Ireland. +353-21-490-3000 Email: ruggero.loi@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.rssid 396524443
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Higher Education Authority en
dc.description.status Peer reviewed en
dc.identifier.journaltitle IEEE Photonics Journal en
dc.internal.copyrightchecked !!CORA!! en
dc.identifier.articleid 1504810


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement