dc.contributor.author |
Loi, Ruggero |
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dc.contributor.author |
O'Callaghan, James |
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dc.contributor.author |
Roycroft, Brendan |
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dc.contributor.author |
Robert, Cedric |
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dc.contributor.author |
Fecioru, Alin |
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dc.contributor.author |
Trindade, António José |
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dc.contributor.author |
Gocalińska, Agnieszka M. |
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dc.contributor.author |
Bower, Christopher A. |
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dc.contributor.author |
Corbett, Brian M. |
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dc.date.accessioned |
2017-01-19T09:33:25Z |
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dc.date.available |
2017-01-19T09:33:25Z |
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dc.date.issued |
2016-11-11 |
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dc.identifier.citation |
Loi, R., Callaghan, J. O., Roycroft, B., Robert, C., Fecioru, A., Trindade, A. J., Gocalinska, A., Pelucchi, E., Bower, C. A. and Corbett, B. (2016) ' Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates', IEEE Photonics Journal, 8(6), pp. 1-10. doi:10.1109/JPHOT.2016.2627883 |
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dc.identifier.volume |
8 |
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dc.identifier.issued |
6 |
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dc.identifier.startpage |
1504810-1 |
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dc.identifier.endpage |
1504810-11 |
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dc.identifier.issn |
1943-0655 |
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dc.identifier.uri |
http://hdl.handle.net/10468/3477 |
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dc.identifier.doi |
10.1109/JPHOT.2016.2627883 |
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dc.description.abstract |
InP-etched facet ridge lasers emitting in the optical C-band are heterogeneously integrated on Si substrates by microtransfer printing for the first time. 500 μm × 60 μm laser coupons are fabricated with a highly dense pitch on the native InP substrate. The laser epitaxial structure contains a 1-μm-thick InGaAs sacrificial layer. A resist anchoring system is used to restrain the devices while they are released by selectively etching the InGaAs layer with FeCl3:H2O (1:2) at 8 °C. Efficient thermal sinking is achieved by evaporating Ti-Au on the Si target substrate and annealing the printed devices at 300 °C. This integration strategy is particularly relevant for lasers being butt coupled to polymer or silicon-on-insulator (SOI) waveguides. |
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dc.description.sponsorship |
Science Foundation Ireland (SFI under Irish Photonic Integration Centre Award 12/RC/2276); Irish Higher Education Authority (HEA Program for Research in Third Level Institutions (2007–2011) via the INSPIRE program) |
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dc.format.mimetype |
application/pdf |
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dc.language.iso |
en |
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dc.publisher |
IEEE |
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dc.rights |
© 2016 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications_standards/publications/rights/index.html for more information. |
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dc.subject |
Fabrication and characterization |
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dc.subject |
Heterogeneous integration |
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dc.subject |
Optical device |
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dc.subject |
Infrared lasers |
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dc.subject |
Photonic materials |
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dc.subject |
Engineered photonic structures |
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dc.subject |
Substrates |
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dc.subject |
III-V semiconductor materials |
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dc.subject |
Indium phosphide |
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dc.subject |
Waveguide lasers |
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dc.subject |
Indium gallium arsenide |
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dc.title |
Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates |
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dc.type |
Article (peer-reviewed) |
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dc.internal.authorcontactother |
Ruggero Loi, Photonics Centre, Tyndall National Institute, University College Cork, Cork, Ireland. +353-21-490-3000 Email: ruggero.loi@tyndall.ie |
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dc.internal.availability |
Full text available |
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dc.description.version |
Published Version |
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dc.internal.rssid |
396524443 |
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dc.contributor.funder |
Science Foundation Ireland
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dc.contributor.funder |
Higher Education Authority
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dc.description.status |
Peer reviewed |
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dc.identifier.journaltitle |
IEEE Photonics Journal |
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dc.internal.copyrightchecked |
!!CORA!! |
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dc.identifier.articleid |
1504810 |
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