Strain induced effects on electronic structure of semi-metallic and semiconducting tin nanowires

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dc.contributor.author Ansari, Lida
dc.contributor.author Fagas, Gíorgos
dc.contributor.author Greer, James C.
dc.date.accessioned 2017-01-20T12:41:22Z
dc.date.available 2017-01-20T12:41:22Z
dc.date.issued 2014-09-22
dc.identifier.citation Ansari, L., Fagas, G. and Greer, J. C. (2014) 'Strain induced effects on electronic structure of semi-metallic and semiconducting tin nanowires', Applied Physics Letters, 105(12): 123105. doi:10.1063/1.4896293 en
dc.identifier.volume 105 en
dc.identifier.issued 12 en
dc.identifier.startpage 123105-1 en
dc.identifier.endpage 123105-4 en
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10468/3487
dc.identifier.doi 10.1063/1.4896293
dc.description.abstract Semimetal nanowires are known to undergo a semimetal to semiconductor transition as a consequence of quantum confinement as their diameters are decreased. Using density functional theory calculations, the electronic structure of tin nanowires (SnNWs) under uniaxial strain within a range of 4% to þ4% is investigated. It is demonstrated that a [110]-oriented semi-metallic SnNW with a diameter of 4.2 nm can be made either more metallic or semiconducting by the application of tensile or compressive strain, respectively. On the contrary, a [100]-oriented semimetallic SnNW with a slightly larger diameter of 4.5 nm remains semiconducting with the application of either compressive or tensile strain. Carrier effective masses are calculated from the band structures; it is shown that for semimetal SnNW along [110] orientation the conduction and valence bands display near linear dispersion under both compressive and tensile strains (<3%) which leads to very small effective masses of 0.007m0. We also show that strain energies and Young modulus vary with nanowire diameter and crystal orientation. The effect of alloying on the generation of tensile and compressive strains in SnNWs is also investigated. en
dc.description.sponsorship Science Foundation Ireland (Principal Investigator award 13/IA/1956) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2014, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters 105, 123105 (2014) and may be found at http://dx.doi.org/10.1063/1.4896293 en
dc.subject Strain-induced effects en
dc.subject TiN nanowires en
dc.subject Epitaxy en
dc.title Strain induced effects on electronic structure of semi-metallic and semiconducting tin nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother James Greer, Tyndall Graduate Studies, University College Cork, Cork, Ireland. +353-21-490-3000 Email: jim.greer@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2017-01-17T20:58:13Z
dc.description.version Published Version en
dc.internal.rssid 279268614
dc.internal.wokid 000343004400067
dc.contributor.funder European Commission en
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress jim.greer@tyndall.ie en
dc.internal.IRISemailaddress lida.ansari@tyndall.ie en
dc.identifier.articleid 123105
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257856/EU/Semiconducting Nanowire Platform for Autonomous Sensors/SINAPS en


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