Structural and electrical investigation of MoS2 thin films formed by thermal assisted conversion of Mo metal

Show simple item record Duffy, Ray Foley, Patrick Filippone, Bruno Mirabelli, Gioele O'Connell, Dan Sheehan, Brendan Carolan, Patrick B. Schmidt, Michael Cherkaoui, Karim Gatensby, Riley Hallam, Toby Duesberg, Georg S. Crupi, Felice Nagle, Roger E. Hurley, Paul K. 2017-01-20T14:24:24Z 2017-01-20T14:24:24Z 2016-06-30
dc.identifier.citation Duffy, R., Foley, P., Filippone, B., Mirabelli, G., O'Connell, D., Sheehan, B., Carolan, P., Schmidt, M., Cherkaoui, K., Gatensby, R., Hallam, T., Duesberg, G., Crupi, F., Nagle, R. and Hurley, P. K. (2016) 'Structural and Electrical Investigation of MoS2 Thin Films Formed by Thermal Assisted Conversion of Mo Metal', ECS Journal of Solid State Science and Technology, 5(11), pp. Q3016-Q3020. en
dc.identifier.volume 5 en
dc.identifier.issued 11 en
dc.identifier.startpage Q3016 en
dc.identifier.endpage Q3020 en
dc.identifier.issn 2162-8769
dc.identifier.doi 10.1149/2.0041611jss
dc.description.abstract Large-area synthesis is of great demand for the preparation of high-performance transition-metal-dichalcogenides (TMD) devices, however there are only limited reports to date of device operation on large-area TMDs. In this work we fabricate MoS2 devices based on Thermal Assisted Conversion (TAC) of metal layers, and characterize the thin-films with material analysis combined with electrical device parameter extraction. Specifically we report on temperature dependent parameter extraction for Ti/Au contacts to MoS2 thin-films to determine sheet resistance (Rsh), resistivity (ρ), and the activation energy (EA) of on-state current flow. For undoped MoS2, ρ was determined to be 191 Ω.cm at 25°C. The activation energy of the on-state current was found to be 0.18 eV, pointing to the presence of deep levels in MoS2. en
dc.description.sponsorship Science Foundation Ireland (Contract No. 12/RC/2278 and PI_10/IN.1/I3030; US-Ireland R&D Partnership Programme “Understanding the Nature of Interfaces in Two Dimensional Electronics (UNITE)” grant Number SFI/13/US/I2862); Higher Education Authority (Programme for Research in Third Level Institutions in Ireland under grant Agreement no. HEA PRTLI5.) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IEEE en
dc.rights © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. en
dc.subject Electron devices en
dc.subject MoS2 en
dc.subject Resistivity en
dc.subject Thin-films en
dc.subject TMDs en
dc.title Structural and electrical investigation of MoS2 thin films formed by thermal assisted conversion of Mo metal en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Raymond Duffy, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2017-01-20T14:14:43Z
dc.description.version Accepted Version en
dc.internal.rssid 380364512
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Higher Education Authority en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ECS Journal of Solid State Science and Technology en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en

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