The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors

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dc.contributor.author Fu, Yen-Chun
dc.contributor.author Peralagu, Uthayasankaran
dc.contributor.author Millar, David A. J.
dc.contributor.author Lin, Jun
dc.contributor.author Povey, Ian M.
dc.contributor.author Li, Xu
dc.contributor.author Monaghan, Scott
dc.contributor.author Droopad, Ravi
dc.contributor.author Hurley, Paul K.
dc.contributor.author Thayne, Iain G.
dc.date.accessioned 2017-05-11T15:10:03Z
dc.date.available 2017-05-11T15:10:03Z
dc.date.issued 2017-04-06
dc.identifier.citation Fu, Y.-C., Peralagu, U., Millar, D. A. J., Lin, J., Povey, I., Li, X., Monaghan, S., Droopad, R., Hurley, P. K. and Thayne, I. G. (2017) 'The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors', Applied Physics Letters, 110(14), pp. 142905. doi:10.1063/1.4980012 en
dc.identifier.volume 110 en
dc.identifier.issued 14 en
dc.identifier.startpage 142905-1 en
dc.identifier.endpage 142905-6 en
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10468/3948
dc.identifier.doi 10.1063/1.4980012
dc.description.abstract This study reports the impact of forming gas annealing (FGA) on the electrical characteristics of sulfur passivated, atomic layer deposited Al2O3 gate dielectrics deposited on (110) oriented n- and p-doped In0.53Ga0.47 As layers metal-oxide-semiconductor capacitors (MOSCAPs). In combination, these approaches enable significant Fermi level movement through the bandgap of both n- and p-doped In0.53Ga0.47 As (110) MOSCAPs. A midgap interface trap density (Dit) value in the range 0.87−1.8×1012 cm−2eV−10.87−1.8×1012 cm−2eV−1 is observed from the samples studied. Close to the conduction band edge, a Dit value of 3.1×1011 cm−2eV−13.1×1011 cm−2eV−1 is obtained. These data indicate the combination of sulfur pre-treatment and FGA is advantageous in passivating trap states in the upper half of the bandgap of (110) oriented In0.53Ga0.47 As. This is further demonstrated by a reduction in border trap density in the n-type In0.53Ga0.47 As (110) MOSCAPs from 1.8×1012 cm−21.8×1012 cm−2 to 5.3×1011 cm−25.3×1011 cm−2 as a result of the FGA process. This is in contrast to the observed increase in border trap density after FGA from 7.3×1011 cm−27.3×1011 cm−2 to 1.4×1012 cm−21.4×1012 cm−2 in p-type In0.53Ga0.47 As (110) MOSCAPs, which suggest FGA is not as effective in passsivating states close to the valence band edge. en
dc.description.sponsorship Tokyo Electron Ltd. (Custom funding from the Semiconductor Research Corporation through DS Digital CMOS Technologies (Task ID: 2188.002) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2017, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in: Appl. Phys. Lett. 110, 142905 (2017) and may be found at http://aip.scitation.org/doi/pdf/10.1063/1.4980012 en
dc.subject III-V semiconductors en
dc.subject Electrical hysteresis en
dc.subject Capacitance en
dc.subject Band gap en
dc.subject Atomic layer deposition en
dc.title The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Ian Povey, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: ian.povey@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication at the request of the publisher. en
dc.check.date 2018-04-06
dc.date.updated 2017-05-11T14:04:45Z
dc.description.version Published Version en
dc.internal.rssid 394616077
dc.contributor.funder European Commission en
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Tokyo Electron Ltd., Japan en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress Ian.Povey@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619325/EU/Compound Semiconductors for 3D integration/COMPOSE3 en


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