Doping of III-nitride materials

Show simple item record Pampili, Pietro Parbrook, Peter J. 2017-05-12T09:11:44Z 2017-05-12T09:11:44Z 2016-12-04
dc.identifier.citation Pampili, P. and Parbrook, P. J. (2017) 'Doping of III-nitride materials', Materials Science in Semiconductor Processing, 62, pp. 180-191. doi: 10.1016/j.mssp.2016.11.006 en
dc.identifier.volume 62 en
dc.identifier.startpage 180 en
dc.identifier.endpage 191 en
dc.identifier.issn 1369-8001
dc.identifier.doi 10.1016/j.mssp.2016.11.006
dc.description.abstract In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as extending power electronic devices. It is found that doping of AlGaN and InGaN alloys with low-gallium-content has particular challenges, especially for p-materials and these issues are described. en
dc.description.sponsorship Science Foundation Ireland (SFI/10/IN.1/I2993 and SFI/07/EN/E001A) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Elsevier en
dc.rights © 2016 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license en
dc.rights.uri en
dc.subject Gallium nitride en
dc.subject Indium nitride en
dc.subject Aluminium nitride en
dc.subject Semiconductors en
dc.subject Doping en
dc.subject Conductivity en
dc.title Doping of III-nitride materials en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Peter James Parbrook, Electrical & Electronic Engineering, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en Access to this article is restricted until 24 months after publication at the request of the publisher. en 2018-12-04 2017-05-12T09:04:33Z
dc.description.version Accepted Version en
dc.internal.rssid 394743263
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Materials Science In Semiconductor Processing en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en

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© 2016 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license Except where otherwise noted, this item's license is described as © 2016 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license
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