Spatial analysis of failure sites in large area MIM capacitors using wavelets

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dc.contributor.author Muñoz-Gorriz, J.
dc.contributor.author Monaghan, Scott
dc.contributor.author Cherkaoui, Karim
dc.contributor.author Suñé, J.
dc.contributor.author Hurley, Paul K.
dc.contributor.author Miranda, Enrique
dc.date.accessioned 2017-05-12T13:39:35Z
dc.date.available 2017-05-12T13:39:35Z
dc.date.issued 2017-04-13
dc.identifier.citation Muñoz-Gorriz, J., Monaghan, S., Cherkaoui, K., Suñé, J., Hurley, P. K. and Miranda, E. (2017) 'Spatial analysis of failure sites in large area MIM capacitors using wavelets', Microelectronic Engineering, 178, pp. 10-16. doi:10.1016/j.mee.2017.04.011 en
dc.identifier.volume 178 en
dc.identifier.startpage 10 en
dc.identifier.endpage 16 en
dc.identifier.issn 0167-9317
dc.identifier.uri http://hdl.handle.net/10468/3957
dc.identifier.doi 10.1016/j.mee.2017.04.011
dc.description.abstract The spatial distribution of failure sites in large area (104–105 μm2) metal-insulator-metal (MIM) capacitors with high-K dielectric (HfO2) is investigated using angular wavelets. The failure sites are the consequence of constant or ramped electrical stress applied on the capacitors. Because of the important local thermal effects that take place during stress, the failure sites become visible as a point pattern on the top metal electrode. In case of less damaged devices, the results obtained with the wavelet variance method are consistent with an isotropic distribution of breakdown spots as expected for a Poisson point process (complete spatial randomness). On the contrary, for severely damaged devices, the method shows signs of preferred directions of degradation related to the voltage probe location. In this case, the anisotropy is confirmed by alternative spatial statistics methods such as the angular point-to-event distribution and the pair correlation function. en
dc.description.sponsorship Generalitat de Catalunya (DURSI, Grant 2014SGR384) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Elsevier en
dc.rights © 2017 Published by Elsevier B.V. This manuscript version is made available under the CC-BY-NC-ND 4.0 license. en
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/4.0/ en
dc.subject Oxide breakdown en
dc.subject Reliability en
dc.subject MIM en
dc.subject Spatial statistics en
dc.title Spatial analysis of failure sites in large area MIM capacitors using wavelets en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Scott Monaghan, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: scott.monaghan@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this item is restricted until 24 months after publication at the request of the publisher. en
dc.check.date 2019-04-13
dc.date.updated 2017-05-12T11:55:16Z
dc.description.version Accepted Version en
dc.internal.rssid 394743295
dc.contributor.funder European Commission en
dc.contributor.funder Horizon 2020 en
dc.contributor.funder Departament d'Universitats, Recerca i Societat de la Informació en
dc.contributor.funder Generalitat de Catalunya en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Microelectronic Engineering en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress scott.monaghan@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/H2020::RIA/654384/EU/Access to European Nanoelectronics Network/ASCENT en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::SP1-JTI/621217/EU/PANACHE/PANACHE en


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© 2017 Published by Elsevier B.V. This manuscript version is made available under the CC-BY-NC-ND 4.0 license. Except where otherwise noted, this item's license is described as © 2017 Published by Elsevier B.V. This manuscript version is made available under the CC-BY-NC-ND 4.0 license.
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