Development of inverted p-substrate InP/AlGaInAs lasers for vertical integration with multiple passive or active intrinsic regions

Duggan, Shane P.; Kelly, Niall P.; Caro, Ludovic; Dernaika, Mohamad; Shayesteh, Maryam; Alexander, Justin K.; Yang, Hua; Morrissey, Padraic E.; Gocalińska, Agnieszka M.; Thomas, Kevin K.; Pelucchi, Emanuele; Peters, Frank H.

Development of inverted p-substrate InP/AlGaInAs lasers for vertical integration with multiple passive or active intrinsic regions

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Published Version

Date

2017

Authors

Duggan, Shane P.

Kelly, Niall P.

Caro, Ludovic

Dernaika, Mohamad

Shayesteh, Maryam

Alexander, Justin K.

Yang, Hua

Morrissey, Padraic E.

Gocalińska, Agnieszka M.

Thomas, Kevin K.

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Publisher

European Conference on Integrated Optics

Keywords

Zn dopant , Zn diffusion , Carbon doped layer

Citation

Duggan, S. P., Kelly, N. P., Caro, L., Dernaika, M., Shayesteh, M., Alexander, J. K., Yang, H., Morrissey, P. E., Gocalinska, A., Thomas, K. K., Pelucchi, E., Peters, F. H. (2017) ‘Development of inverted p-substrate InP/AlGaInAs lasers for vertical integration with multiple passive or active intrinsic regions’, Proceedings of the European Conference on Integrated Optics 2017, Eindhoven, the Netherlands, 3-5 April.