Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

Show simple item record O'Connor, Éamon Cherkaoui, Karim Monaghan, Scott Sheehan, Brendan Povey, Ian M. Hurley, Paul K. 2017-05-25T08:36:43Z 2017-05-25T08:36:43Z 2017-01-19
dc.identifier.citation O'Connor, É., Cherkaoui, K., Monaghan, S., Sheehan, B., Povey, I. M. and Hurley, P. K. (2017) 'Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration', Applied Physics Letters, 110, 032902 (5pp). doi:10.1063/1.4973971 en
dc.identifier.volume 110 en
dc.identifier.startpage 1 en
dc.identifier.endpage 5 en
dc.identifier.issn 0003-6951
dc.identifier.doi 10.1063/1.4973971
dc.description.abstract In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate oxide and a range of n and p-type In0.53Ga0.47As epitaxial concentrations were examined. Multi-frequency capacitance-voltage and conductance-voltage characterization exhibited minority carrier responses consistent with surface inversion. The measured minimum capacitance at high frequency (1 MHz) was in excellent agreement with the theoretical minimum capacitance calculated assuming an inverted surface. Minority carrier generation lifetimes, sg, extracted from experimentally measured transition frequencies, xm, using physics based a.c. simulations, demonstrated a reduction in sg with increasing epitaxial doping concentration. The frequency scaled conductance, G/x, in strong inversion allowed the estimation of accurate Cox values for these MOS devices. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2017, the Authors. Reproduced with the permission of AIP Publishing from Applied Physics Letters, 110, 032902 (5pp). doi:10.1063/1.4973971 en
dc.rights.uri en
dc.subject Alumina en
dc.subject Capacitance en
dc.subject Carrier lifetime en
dc.subject Doping profiles en
dc.subject Electric admittance en
dc.subject Gallium arsenide en
dc.subject III-V semiconductors en
dc.subject Indium compounds en
dc.subject Minority carriers en
dc.subject MOS capacitors en
dc.title Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Karim Cherkaoui, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2017-05-25T08:12:08Z
dc.description.version Accepted Version en
dc.internal.rssid 396270032
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Horizon 2020 en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.identifier.articleid 032902
dc.relation.project Science Foundation Ireland (“INVENT” Project No. 09/IN.1/I2633) en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619325/EU/Compound Semiconductors for 3D integration/COMPOSE3 en
dc.relation.project info:eu-repo/grantAgreement/EC/H2020::RIA/688784/EU/Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies/INSIGHT en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/628523/EU/Fast Anneal of Compound semiconductors for Integration of new Technologies/FACIT en

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