Thin film technology for optoelectronics and their thermal management

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dc.contributor.advisor Parbrook, Peter James en
dc.contributor.advisor Corbett, Brian en
dc.contributor.author Quan, Zhiheng
dc.date.accessioned 2017-06-06T08:57:51Z
dc.date.available 2017-06-06T08:57:51Z
dc.date.issued 2017
dc.date.submitted 2017
dc.identifier.citation Quan, Z. 2017. Thin film technology for optoelectronics and their thermal management. PhD Thesis, University College Cork. en
dc.identifier.endpage 146 en
dc.identifier.uri http://hdl.handle.net/10468/4053
dc.description.abstract Thin-film semiconductor optoelectronics are important for applications from optical communication, solid-state lighting, and wearable electronics to biomedical sensors. It is now possible to separate the micrometer-thick device layers from their native substrates and transfer them onto new platforms to optimize system performance and integration. The understanding of thermal management for such devices is very important in order to control the junction temperature effectively. Here, the laser-lift-off (LLO) technique was theoretically and experimentally studied. The temperature distribution at the III-nitride/sapphire interface induced by absorption of 248-nm KrF excimer energetic laser pulses was simulated to verify the experimental results. A 1.5-m-thick n-type Al0.6Ga0.4N membrane was separated from a c-plane sapphire substrate and then bonded to a Si substrate. The electrical behaviour of Ti/Al/Ti/Au contacts on the N-polar n-Al0.6Ga0.4N membrane was characterized. Furthermore, free-standing semipolar InGaN/GaN light-emitting diodes (LEDs) emitting at 445 nm were first realized by separation from patterned r-plane sapphire substrate using LLO. The LEDs showed a turn-on voltage of 3.6 V and output power of 0.87 mW at 20 mA. Electroluminescence measurements showed stronger emission intensity along the inclined c-direction. The -3 dB bandwidth of the LEDs is in excess of 150 MHz at 20 mA and a back-to-back data transmission rate at 300 Mbps is demonstrated. This indicates that the LEDs can be used for high bandwidth visible light communications. For thermal management of thin-film optoelectronics, a GaAs based laser diode (LD) was investigated. The 2-dimensional temperature distribution of the transfer-bonded LD was simulated; where the power dissipation, the thermal resistance of different cavity lengths and configurations were investigated. This can be utilized to optimize the device design and the choice of carrier substrate for efficient thermal management of thin-film optoelectronics. en
dc.description.sponsorship European Space Agency (ESTEC 4000104929/11/NL/CBi); H2020 Marie Skłodowska-Curie Actions (EU-IAPP 286285); Seventh Framework Programme (FP7-280587) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher University College Cork en
dc.rights © 2017, Zhiheng Quan. en
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/ en
dc.subject Thin film optoelectronics en
dc.subject Laser lift-off en
dc.subject III-Nitride en
dc.subject Free-standing LEDs en
dc.subject Thin film laser diode en
dc.title Thin film technology for optoelectronics and their thermal management en
dc.type Doctoral thesis en
dc.type.qualificationlevel Doctoral en
dc.type.qualificationname PHD (Engineering) en
dc.internal.availability Full text available en
dc.check.info No embargo required en
dc.description.version Accepted Version
dc.contributor.funder European Space Agency en
dc.contributor.funder H2020 Marie Skłodowska-Curie Actions en
dc.contributor.funder Seventh Framework Programme en
dc.description.status Not peer reviewed en
dc.internal.school Electrical and Electronic Engineering en
dc.internal.school Tyndall National Institute en
dc.check.type No Embargo Required
dc.check.reason No embargo required en
dc.check.opt-out Not applicable en
dc.thesis.opt-out false
dc.check.embargoformat Not applicable en
ucc.workflow.supervisor peter.parbrook@tyndall.ie
dc.internal.conferring Summer 2017 en


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© 2017, Zhiheng Quan. Except where otherwise noted, this item's license is described as © 2017, Zhiheng Quan.
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