Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications

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dc.contributor.author Gammon, P. M.
dc.contributor.author Chan, C. W.
dc.contributor.author Gity, Farzan
dc.contributor.author Trajkovic, T.
dc.contributor.author Kilchytska, V.
dc.contributor.author Fan, L.
dc.contributor.author Pathirana, V.
dc.contributor.author Camuso, G.
dc.contributor.author Ben Ali, K.
dc.contributor.author Flandre, Denis
dc.contributor.author Mawby, P. A.
dc.date.accessioned 2017-06-16T14:18:11Z
dc.date.available 2017-06-16T14:18:11Z
dc.date.issued 2017-05-23
dc.identifier.citation Gammon, P. M., Chan, C. W., Gity, F., Trajkovic, T., Kilchytska, V., Fan, L., Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P. A. and Gardner, J. W. (2017) 'Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications', ES3 Web of Conferences., 16, pp. 12003. doi: 10.1051/e3sconf/20171612003 en
dc.identifier.volume 16 en
dc.identifier.startpage 12003-1 en
dc.identifier.endpage 12003-5 en
dc.identifier.issn 2267-1242
dc.identifier.uri http://hdl.handle.net/10468/4086
dc.identifier.doi 10.1051/e3sconf/20171612003
dc.description.abstract A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to silicon carbide (SiC). This novel silicon-on-silicon-carbide (Si/SiC) substrate solution promises to combine the benefits of silicon-on-insulator (SOI) technology (i.e device confinement, radiation tolerance, high and low temperature performance) with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance). Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions. en
dc.description.sponsorship Engineering and Physical Sciences Research Council (EPSRC (Project EP/N00647X/1)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher EDP Sciences en
dc.rights © The Authors, published by EDP Sciences, 2017. This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. en
dc.rights.uri http://creativecommons.org/licenses/by/4.0/). en
dc.subject Power electronic semiconductor devices en
dc.subject Thermal conductivity en
dc.subject Silicon thin film en
dc.subject Terrestrial harsh-environment applications en
dc.subject Space harsh-environment applications en
dc.subject Silicon-on-silicon-carbide (Si/SiC) en
dc.title Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications en
dc.type Article (peer-reviewed) en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder European Commission en
dc.contributor.funder Royal Academy of Engineering en
dc.contributor.funder Engineering and Physical Sciences Research Council en
dc.contributor.funder Horizon 2020 en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ES3 Web of Conferences en
dc.relation.project info:eu-repo/grantAgreement/EC/H2020::RIA/687361/EU/Si on SiC for the Harsh Environment of Space/SaSHa en


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© The Authors, published by EDP Sciences, 2017. This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Except where otherwise noted, this item's license is described as © The Authors, published by EDP Sciences, 2017. This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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