Optical gain in GaAsBi/GaAs quantum well diode lasers

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dc.contributor.author Marko, Igor P.
dc.contributor.author Broderick, Christopher A.
dc.contributor.author Jin, Shirong
dc.contributor.author Ludewig, Peter
dc.contributor.author Stolz, Wolfgang
dc.contributor.author Volz, Kerstin
dc.contributor.author Rorison, Judy M.
dc.contributor.author O'Reilly, Eoin P.
dc.contributor.author Sweeney, Stephen J.
dc.date.accessioned 2017-06-22T13:55:54Z
dc.date.available 2017-06-22T13:55:54Z
dc.date.issued 2016-07-01
dc.identifier.citation Marko, I. P., Broderick, C. A., Jin, S., Ludewig, P., Stolz, W., Volz, K., Rorison, J. M., O’Reilly, E. P. and Sweeney, S. J. (2016) 'Optical gain in GaAsBi/GaAs quantum well diode lasers', Scientific Reports, 6, 28863 (10pp). doi: 10.1038/srep28863 en
dc.identifier.volume 6
dc.identifier.startpage 1
dc.identifier.endpage 10
dc.identifier.issn 2045-2322
dc.identifier.uri http://hdl.handle.net/10468/4171
dc.identifier.doi 10.1038/srep28863
dc.description.abstract Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devices where, by use of the unusual band structure properties of GaAsBi alloys, it is possible to suppress the dominant energy-consuming Auger recombination and inter-valence band absorption loss mechanisms, which greatly impact upon the device performance. Suppression of these loss mechanisms promises to lead to highly efficient, uncooled operation of telecommunications lasers, making GaAsBi system a strong candidate for the development of next-generation semiconductor lasers. In this report we present the first experimentally measured optical gain, absorption and spontaneous emission spectra for GaAsBi-based quantum well laser structures. We determine internal optical losses of 10–15 cm−1 and a peak modal gain of 24 cm−1, corresponding to a material gain of approximately 1500 cm−1 at a current density of 2 kA cm−2. To complement the experimental studies, a theoretical analysis of the spontaneous emission and optical gain spectra is presented, using a model based upon a 12-band k.p Hamiltonian for GaAsBi alloys. The results of our theoretical calculations are in excellent quantitative agreement with the experimental data, and together provide a powerful predictive capability for use in the design and optimisation of high efficiency lasers in the infrared. en
dc.description.sponsorship Engineering and Physical Sciences Research Council, U.K. (project EP/H005587/01; EP/H050787/1; EP/K029665/1); German Science Foundation (project DFG: VO805/4; DFG: GRK1782); Science Foundation Ireland (project 10/IN.1/I2994). en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Nature Publishing Group en
dc.relation.uri https://www.nature.com/articles/srep28863
dc.rights © 2016, Marko et al. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ en
dc.rights.uri http://creativecommons.org/licenses/by/4.0/ en
dc.subject Photonic devices en
dc.subject Semiconductor lasers en
dc.title Optical gain in GaAsBi/GaAs quantum well diode lasers en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Eoin P. O’Reilly, Physics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: eoin.oreilly@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Engineering and Physical Sciences Research Council
dc.contributor.funder Deutsche Forschungsgemeinschaft
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Seventh Framework Programme
dc.description.status Peer reviewed en
dc.identifier.journaltitle Scientific Reports en
dc.check.chapterOfThesis
dc.internal.IRISemailaddress eoin.oreilly@tyndall.ie en
dc.identifier.articleid 28863
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257974/EU/BIsmide And Nitride Components for High temperature Operation/BIANCHO


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© 2016, Marko et al. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ Except where otherwise noted, this item's license is described as © 2016, Marko et al. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
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