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Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells
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Published Version
Date
2016-08-04
Authors
Dinh, Duc V.
Brunner, Frank
Weyers, Markus
Corbett, Brian M.
Parbrook, Peter J.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
The exciton localization in semipolar (112⎯⎯2112¯2) InxGa1−xN (0.13 ≤ x ≤ 0.35) multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. A strong exciton localization was found in the samples with a linear dependence with In-content and emission energy, consistent with the Stokes-shift values. This strong localization was found to cause a blue-shift of the MQW exciton emission energy at temperature above 100 K, which was found to linearly increase with increasing In-content.
Description
Keywords
Multiple quantum wells , Photoluminescence , Excitons , III-V semiconductors , Surface morphology
Citation
Dinh, D. V., Brunner, F., Weyers, M., Corbett, B. and Parbrook, P. J. (2016) 'Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells', Journal of Applied Physics, 120(5), 055705. doi:10.1063/1.4960348
Copyright
© 2016, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 120, 055705 (2016) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4960348