Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells

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dc.contributor.author Dinh, Duc V.
dc.contributor.author Brunner, Frank
dc.contributor.author Weyers, Markus
dc.contributor.author Corbett, Brian M.
dc.contributor.author Parbrook, Peter J.
dc.date.accessioned 2017-06-29T11:16:24Z
dc.date.available 2017-06-29T11:16:24Z
dc.date.issued 2016-08-04
dc.identifier.citation Dinh, D. V., Brunner, F., Weyers, M., Corbett, B. and Parbrook, P. J. (2016) 'Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells', Journal of Applied Physics, 120(5), 055705. doi:10.1063/1.4960348 en
dc.identifier.volume 120 en
dc.identifier.issued 5 en
dc.identifier.startpage 55705-1 en
dc.identifier.endpage 55705-5 en
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.uri http://hdl.handle.net/10468/4203
dc.identifier.doi 10.1063/1.4960348
dc.description.abstract The exciton localization in semipolar (112⎯⎯2112¯2) InxGa1−xN (0.13 ≤ x ≤ 0.35) multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. A strong exciton localization was found in the samples with a linear dependence with In-content and emission energy, consistent with the Stokes-shift values. This strong localization was found to cause a blue-shift of the MQW exciton emission energy at temperature above 100 K, which was found to linearly increase with increasing In-content. en
dc.description.sponsorship Higher Education Authority (Programme for Research in Third Level Institutions (PRTLI) fourth and fifth cycles.) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2016, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 120, 055705 (2016) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4960348 en
dc.subject Multiple quantum wells en
dc.subject Photoluminescence en
dc.subject Excitons en
dc.subject III-V semiconductors en
dc.subject Surface morphology en
dc.title Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Van Duc Dinh, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: vanduc.dinh@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication at the request of the publisher. en
dc.check.date 2017-08-04
dc.date.updated 2017-06-29T11:01:40Z
dc.description.version Published Version en
dc.internal.rssid 400978245
dc.contributor.funder European Commission en
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Higher Education Authority en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress vanduc.dinh@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::NMP/280587/EU/AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications/ALIGHT en


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