Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

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dc.contributor.author Piwonski, Tomasz
dc.contributor.author Pulka, J.
dc.contributor.author Madden, Gillian
dc.contributor.author Huyet, Guillaume
dc.contributor.author Houlihan, John
dc.contributor.author Pozo, J.
dc.contributor.author Vogiatzis, N.
dc.contributor.author Ivanov, P.
dc.contributor.author Rorison, J. M.
dc.contributor.author Barrios, P. J.
dc.contributor.author Gupta, J. A.
dc.date.accessioned 2017-07-12T09:07:43Z
dc.date.available 2017-07-12T09:07:43Z
dc.date.issued 2009-10-04
dc.identifier.citation Piwonski, T., Pulka, J., Madden, G., Huyet, G., Houlihan, J., Pozo, J., Vogiatzis, N., Ivanov, P., Rorison, J. M., Barrios, P. J. and Gupta, J. A. (2009) 'Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers', Journal of Applied Physics, 106(8), pp. 083104. doi: 10.1063/1.3246781 en
dc.identifier.volume 106
dc.identifier.issued 8
dc.identifier.startpage 1
dc.identifier.endpage 5
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4214
dc.identifier.doi 10.1063/1.3246781
dc.description.abstract The gain and refractive index dynamics of dilute nitride antimonide semiconductor optical amplifiers are studied using heterodyne pump probe spectroscopy, both in forward and reverse bias regimes. In the forward biased absorption regime, both gain and refractive index relax on the same timescale indicating that both quantities are linked to the same relaxation process, interband recombination. Above transparency, in the forward biased gain regime, the gain and phase exhibit differing timescales resulting in a dynamical alpha factor that varies strongly with time. Reversed bias measurements suggest a recombination dominated absorption recovery where the recovery timescale increases with increasing reversed bias, possibly due to charge separation effects. en
dc.description.sponsorship Science Foundation Ireland (under the Strategic Research Cluster PIFAS [07/SRC/I1173); Higher Education Authority (Irish Government's Programme for Research in Third Level Institutions); Irish Government (National Development Plan (2007-2013)); Institutes of Technology Ireland (funding under the Technological Sector Research Strand 1 programme) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/10.1063/1.3246781
dc.rights © 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Piwonski, T., Pulka, J., Madden, G., Huyet, G., Houlihan, J., Pozo, J., Vogiatzis, N., Ivanov, P., Rorison, J. M., Barrios, P. J. and Gupta, J. A. (2009) 'Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers', Journal of Applied Physics, 106(8), pp1-5. 083104. doi: 10.1063/1.3246781 and may be found at http://aip.scitation.org/doi/10.1063/1.3246781 en
dc.subject Continuous-wave operation en
dc.subject Laser-diodes en
dc.subject Quantum wells en
dc.subject 1.55-mu-m en
dc.subject Growth en
dc.subject GAAS en
dc.subject NM en
dc.subject III-V semiconductors en
dc.subject Refractive index en
dc.subject Blue shift en
dc.subject Cladding en
dc.title Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Tomasz Piwonski, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000. E-mail: tomasz.piwonski@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Higher Education Authority
dc.contributor.funder Institutes of Technology, Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress tomasz.piwonski@tyndall.ie en
dc.identifier.articleid 83104


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