Development of residual stress in sol-gel derived Pb(Zr,Ti)O-3 films: An experimental study

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dc.contributor.author Corkovic, S.
dc.contributor.author Whatmore, Roger W.
dc.contributor.author Zhang, Q.
dc.date.accessioned 2017-07-12T09:07:45Z
dc.date.available 2017-07-12T09:07:45Z
dc.date.issued 2008-04-16
dc.identifier.citation Corkovic, S., Whatmore, R. W. and Zhang, Q. (2008) 'Development of residual stress in sol-gel derived Pb(Zr,Ti)O3 films: An experimental study', Journal of Applied Physics, 103(8), pp. 084101. doi: 10.1063/1.2890142 en
dc.identifier.volume 103
dc.identifier.issued 8
dc.identifier.startpage 1
dc.identifier.endpage 12
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.uri http://hdl.handle.net/10468/4225
dc.identifier.doi 10.1063/1.2890142
dc.description.abstract Residual stresses develop in the sol-gel-derived ferroelectric thin films during the transformation of the metal-organic gel to the metal oxide upon thermal treatment and due to the thermal and elastic mismatch between the Pb(Zr-x,Ti1-x)O-3 (PZT) film and the substrate materials during cooling. In this study, residual stresses were determined using the wafer curvature method after the deposition of multilayer PZT film on platinized (100) silicon wafers. A multilayer model for stress analysis was used to calculate the residual stress in PZT films of three different compositions: x=0.4, x=0.52, and x=0.6. Orientation dependent residual stresses were found in compositions containing the tetragonal phase, with x=0.4 and x=0.52. Depending on the fraction of (100) orientated domains low compressive or low tensile stress was found in Pb(Zr0.4Ti0.6)O-3 (PZT 40/60). Higher residual stress was found in PZT films consisting of only rhombohedral crystallographic structure (PZT 60/40) while the residual stress in PZT films with morphotropic boundary composition (PZT 52/48) was significantly dependent on the film orientation and the phase composition and could range from 17 to 90 MPa. The effect of the film orientation on residual stress was found to be a function of the anisotropic thermal expansion coefficient of PZT. The contribution of the thermal and elastic properties of materials to the total wafer curvature was investigated and discussed. Finally, the residual stress results calculated with the four layer model were compared to the results calculated using the Stoney equation. en
dc.description.sponsorship Engineering and Physical Sciences Research Council ((GR/S45027/01) (EP/E035043/1)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.2890142
dc.rights © 2008 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Corkovic, S., Whatmore, R. W. and Zhang, Q. (2008) 'Development of residual stress in sol-gel derived Pb(Zr,Ti)O3 films: An experimental study', Journal of Applied Physics, 103(8), pp. 084101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2890142 en
dc.subject Ferroelectric thin-films en
dc.subject Electrical-properties en
dc.subject Bottom electrodes en
dc.subject Thermal-expansion en
dc.subject Pzt films en
dc.subject Substrate en
dc.subject Relaxation en
dc.subject Zirconate en
dc.subject Titanate en
dc.subject Deformation en
dc.subject Lead zirconate titanate en
dc.subject Thin films en
dc.subject PZT films en
dc.subject Platinum en
dc.subject Annealing en
dc.title Development of residual stress in sol-gel derived Pb(Zr,Ti)O-3 films: An experimental study en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Roger Whatmore, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: roger.whatmore@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Engineering and Physical Sciences Research Council
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress roger.whatmore@tyndall.ie en
dc.identifier.articleid 84101


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