Engineering the magnetic properties of Ge1-xMnx nanowires

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Engineering the magnetic properties of Ge1-xMnx nanowires

Kazakova, Olga; Kulkarni, Jaideep S.; Arnold, Donna C.; Holmes, Justin D.
Date: 2007-04-20
Copyright: © 2007 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Kazakova, O., Kulkarni, J. S., Arnold, D. C. and Holmes, J. D. (2007) 'Engineering the magnetic properties of Ge1−xMnx nanowires', Journal of Applied Physics, 101(9), pp. 09H108 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2694052
Related: http://aip.scitation.org/doi/abs/10.1063/1.2694052
Citation: Kazakova, O., Kulkarni, J. S., Arnold, D. C. and Holmes, J. D. (2007) 'Engineering the magnetic properties of Ge1−xMnx nanowires', Journal of Applied Physics, 101(9), pp. 09H108. doi: 10.1063/1.2694052
Published Version: 10.1063/1.2694052

Abstract:

Possible origins of room-temperature ferromagnetism in GeMn nanowires (NWs) are investigated. Arrays of Ge1-xMnx NWs and Ge/Ge1-xMnx nanocables (NCs) (x=1%-5%) have been synthesized within the pores of anodized alumina oxide (AAO) membranes. The influence of annealing on the magnetic properties of Ge1-xMnx NWs is studied. The room-temperature ferromagnetism is preserved after the postfabrication annealing in inert atmosphere (T-ann=750 degrees C) demonstrating overall compatibility of Ge1-xMnx NWs with conventional complementary metal-oxide semiconductor technology. The role of oxygen in high-T-C ferromagnetic ordering is investigated in double-phased NCs with a Ge sheath. Despite a barrier to oxygen migration from the AAO membrane, samples still display room-temperature ferromagnetism, hence, ruling out any significant role of oxygen in the explanation of the high T-C in the system. The magnetic properties of the one-dimensional Ge1-xMnx nanostructures can be understood by considering interface related phenomena.

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