Engineering the magnetic properties of Ge1-xMnx nanowires

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dc.contributor.author Kazakova, Olga
dc.contributor.author Kulkarni, Jaideep S.
dc.contributor.author Arnold, Donna C.
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2017-07-12T09:07:45Z
dc.date.available 2017-07-12T09:07:45Z
dc.date.issued 2007-04-20
dc.identifier.citation Kazakova, O., Kulkarni, J. S., Arnold, D. C. and Holmes, J. D. (2007) 'Engineering the magnetic properties of Ge1−xMnx nanowires', Journal of Applied Physics, 101(9), pp. 09H108. doi: 10.1063/1.2694052 en
dc.identifier.volume 101
dc.identifier.issued 9
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4227
dc.identifier.doi 10.1063/1.2694052
dc.description.abstract Possible origins of room-temperature ferromagnetism in GeMn nanowires (NWs) are investigated. Arrays of Ge1-xMnx NWs and Ge/Ge1-xMnx nanocables (NCs) (x=1%-5%) have been synthesized within the pores of anodized alumina oxide (AAO) membranes. The influence of annealing on the magnetic properties of Ge1-xMnx NWs is studied. The room-temperature ferromagnetism is preserved after the postfabrication annealing in inert atmosphere (T-ann=750 degrees C) demonstrating overall compatibility of Ge1-xMnx NWs with conventional complementary metal-oxide semiconductor technology. The role of oxygen in high-T-C ferromagnetic ordering is investigated in double-phased NCs with a Ge sheath. Despite a barrier to oxygen migration from the AAO membrane, samples still display room-temperature ferromagnetism, hence, ruling out any significant role of oxygen in the explanation of the high T-C in the system. The magnetic properties of the one-dimensional Ge1-xMnx nanostructures can be understood by considering interface related phenomena. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartof 10th Joint Magnetism and Magnetic Materials Conference/International Magnetics Conference
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.2694052
dc.rights © 2007 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Kazakova, O., Kulkarni, J. S., Arnold, D. C. and Holmes, J. D. (2007) 'Engineering the magnetic properties of Ge1−xMnx nanowires', Journal of Applied Physics, 101(9), pp. 09H108 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2694052 en
dc.subject Ferromagnetism en
dc.subject Defects en
dc.subject Germanium en
dc.subject Annealing en
dc.subject Ferromagnetism en
dc.subject Elemental semiconductors en
dc.subject Interface structure en
dc.title Engineering the magnetic properties of Ge1-xMnx nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.identifier.articleid 09H108


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