InP-based lattice-matched InGaAsP and strain-compensated InGaAs/InGaAs quantum well cells for thermophotovoltaic applications

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dc.contributor.author Rohr, Carsten
dc.contributor.author Abbott, Paul
dc.contributor.author Ballard, Ian
dc.contributor.author Connolly, James P.
dc.contributor.author Barnham, Keith W. J.
dc.contributor.author Mazzer, Massimo
dc.contributor.author Button, Chris
dc.contributor.author Nasi, Lucia
dc.contributor.author Hill, Geoff
dc.contributor.author Roberts, John S.
dc.contributor.author Clarke, Graham
dc.contributor.author Ginige, Ravin
dc.date.accessioned 2017-07-12T09:07:46Z
dc.date.available 2017-07-12T09:07:46Z
dc.date.issued 2006-12-08
dc.identifier.citation Rohr, C., Abbott, P., Ballard, I., Connolly, J. P., Barnham, K. W. J., Mazzer, M., Button, C., Nasi, L., Hill, G., Roberts, J. S., Clarke, G. and Ginige, R. (2006) 'InP-based lattice-matched InGaAsP and strain-compensated InGaAs∕InGaAs quantum well cells for thermophotovoltaic applications', Journal of Applied Physics, 100(11), pp. 114510. doi: 10.1063/1.2398466 en
dc.identifier.volume 100
dc.identifier.issued 11
dc.identifier.startpage 1
dc.identifier.endpage 6
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4229
dc.identifier.doi 10.1063/1.2398466
dc.description.abstract Quantum well cells (QWCs) for thermophotovoltaic (TPV) applications are demonstrated in the InGaAsP material system lattice matched to the InP substrate and strain-compensated InGaAs/InGaAs QWCs also on InP substrates. We show that lattice-matched InGaAsP QWCs are very well suited for TPV applications such as with erbia selective emitters. QWCs with the same effective band gap as a bulk control cell show a better voltage performance in both wide and erbialike emission. We demonstrate a QWC with enhanced efficiency in a narrow-band spectrum compared to a bulk heterostructure control cell with the same absorption edge. A major advantage of QWCs is that the band gap can be engineered by changing the well thickness and varying the composition to the illuminating spectrum. This is relatively straightforward in the lattice-matched InGaAsP system. This approach can be extended to longer wavelengths by using strain-compensation techniques, achieving band gaps as low as 0.62 eV that cannot be achieved with lattice-matched bulk material. We show that strain-compensated QWCs have voltage performances that are at least as good as, if not better than, expected from bulk control cells. en
dc.description.sponsorship UK Engineering and Physical Science Research Council (GR/L50471); European Commission (ERK6-CT-1999-00019). en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.2398466
dc.rights © 2006 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Rohr, C., Abbott, P., Ballard, I., Connolly, J. P., Barnham, K. W. J., Mazzer, M., Button, C., Nasi, L., Hill, G., Roberts, J. S., Clarke, G. and Ginige, R. (2006) 'InP-based lattice-matched InGaAsP and strain-compensated InGaAs∕InGaAs quantum well cells for thermophotovoltaic applications', Journal of Applied Physics, 100(11), pp. 114510 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2398466 en
dc.subject Solar-Cells en
dc.subject Quantum wells en
dc.subject Band gap en
dc.subject III-V semiconductors en
dc.subject Dark currents en
dc.subject Bulk materials en
dc.title InP-based lattice-matched InGaAsP and strain-compensated InGaAs/InGaAs quantum well cells for thermophotovoltaic applications en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Ravin Ginige,Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Engineering and Physical Sciences Research Council
dc.contributor.funder European Commission
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress ravin.ginge@tyndall.ie en
dc.identifier.articleid 114510


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