Properties of rf-sputtered indium-tin-oxynitride thin films

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dc.contributor.author Aperathitis, E.
dc.contributor.author Bender, M.
dc.contributor.author Cimalla, V.
dc.contributor.author Ecke, G.
dc.contributor.author Modreanu, Mircea
dc.date.accessioned 2017-07-12T09:11:18Z
dc.date.available 2017-07-12T09:11:18Z
dc.date.issued 2003-07
dc.identifier.citation Aperathitis, E., Bender, M., Cimalla, V., Ecke, G. and Modreanu, M. (2003) 'Properties of rf-sputtered indium–tin-oxynitride thin films', Journal of Applied Physics, 94(2), pp. 1258-1266. doi: 10.1063/1.1582368 en
dc.identifier.volume 94
dc.identifier.issued 2
dc.identifier.startpage 1258
dc.identifier.endpage 1266
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4236
dc.identifier.doi 10.1063/1.1582368
dc.description.abstract Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) thin films have been fabricated by rf-sputtering in plasma containing Ar or a mixture of Ar and N-2, respectively. The structural, electrical and optical properties of ITON films were examined and compared with those of ITO films. The microstructure of ITON films was found to be dependent on the nitrogen concentration in the plasma. Increasing the amount of nitrogen in the plasma increased the resistivity and reduced the carrier concentration and mobility of the films. The electrical properties of the ITON films improved after annealing. The absorption edge of the ITON films deposited in pure N-2 plasma was shifted towards higher energies and showed reduced infrared reflectance compared to the respective properties of ITO films. The potential of indium-tin-oxynitride films for use as a transparent conductive material for optoelectronic devices is addressed. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.1582368
dc.rights © 2003 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Aperathitis, E., Bender, M., Cimalla, V., Ecke, G. and Modreanu, M. (2003) 'Properties of rf-sputtered indium–tin-oxynitride thin films', Journal of Applied Physics, 94(2), pp. 1258-1266 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1582368 en
dc.subject Oxide-films en
dc.subject Optical-properties en
dc.subject Conductivity en
dc.subject Powder en
dc.subject Thin films en
dc.subject Thin film structure en
dc.subject Plasma materials processing en
dc.subject Plasma properties en
dc.subject Optical properties en
dc.title Properties of rf-sputtered indium-tin-oxynitride thin films en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Mircea Modreanu, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email mircea.modreanu@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress mircea.modreanu@tyndall.ie en


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