Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer

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dc.contributor.author Cherkaoui, Karim
dc.contributor.author Murtagh, M. E.
dc.contributor.author Kelly, P. V.
dc.contributor.author Crean, Gabriel M.
dc.contributor.author Cassette, S.
dc.contributor.author Delage, S. L.
dc.contributor.author Bland, S. W.
dc.date.accessioned 2017-07-12T09:11:18Z
dc.date.available 2017-07-12T09:11:18Z
dc.date.issued 2002-01
dc.identifier.citation Cherkaoui, K., Murtagh, M. E., Kelly, P. V., Crean, G. M., Cassette, S., Delage, S. L. and Bland, S. W. (2002) 'Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer', Journal of Applied Physics, 92(5), pp. 2803-2806. en
dc.identifier.volume 92
dc.identifier.issued 5
dc.identifier.startpage 2803
dc.identifier.endpage 2806
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/4238
dc.identifier.doi 10.1063/1.1500417
dc.description.abstract Defects in the emitter region of Ga0.51In0.49P/GaAs heterojunction bipolar transistors (HBTs) were investigated by means of deep-level transient spectroscopy. Both annealed (635 degreesC, 5 min) and as grown metalorganic chemical vapor deposition epitaxial wafers were investigated in this study, with an electron trap observed in the HBT emitter space-charge region from both wafers. The deep-level activation energy was determined to be 0.87+/-0.05 eV below the conduction band, the capture cross section 3x10(-14) cm(2) and the defect density of the order of 10(14) cm(-3). This defect was also found to be localized at the emitter-base interface. en
dc.description.sponsorship European Commission (European Union— HERO’S Project; EU BRITE program (BRPR-CT98-0789)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.1500417
dc.rights © 2002 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Cherkaoui, K., Murtagh, M. E., Kelly, P. V., Crean, G. M., Cassette, S., Delage, S. L. and Bland, S. W. (2002) 'Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer', Journal of Applied Physics, 92(5), pp. 2803-2806 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1500417 en
dc.subject Molecular-beam epitaxy en
dc.subject Vapor-phase epitaxy en
dc.subject Electron traps en
dc.subject Gaas base en
dc.subject Degradation en
dc.subject Hydrogen en
dc.subject Heterostructures en
dc.subject Reliability en
dc.subject In0.5ga0.5p en
dc.subject GaInP/GaAs en
dc.subject Heterojunctions en
dc.subject Bipolar transistors en
dc.subject Epitaxy en
dc.subject Deep level transient spectroscopy en
dc.subject Emission spectroscopy en
dc.title Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Karim Cherkaoui, Tyndall National Institute, University College Cork, Cork, Ireland, +353 21 490 3000, E-mail: karim.cherkaoui@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder European Commission
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.IRISemailaddress karim.cherkaoui@tyndall.ie en


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