Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer

Loading...
Thumbnail Image
Files
3131.pdf(222.73 KB)
Published Version
Date
2002-01
Authors
Cherkaoui, Karim
Murtagh, M. E.
Kelly, P. V.
Crean, Gabriel M.
Cassette, S.
Delage, S. L.
Bland, S. W.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Research Projects
Organizational Units
Journal Issue
Abstract
Defects in the emitter region of Ga0.51In0.49P/GaAs heterojunction bipolar transistors (HBTs) were investigated by means of deep-level transient spectroscopy. Both annealed (635 degreesC, 5 min) and as grown metalorganic chemical vapor deposition epitaxial wafers were investigated in this study, with an electron trap observed in the HBT emitter space-charge region from both wafers. The deep-level activation energy was determined to be 0.87+/-0.05 eV below the conduction band, the capture cross section 3x10(-14) cm(2) and the defect density of the order of 10(14) cm(-3). This defect was also found to be localized at the emitter-base interface.
Description
Keywords
Molecular-beam epitaxy , Vapor-phase epitaxy , Electron traps , Gaas base , Degradation , Hydrogen , Heterostructures , Reliability , In0.5ga0.5p , GaInP/GaAs , Heterojunctions , Bipolar transistors , Epitaxy , Deep level transient spectroscopy , Emission spectroscopy
Citation
Cherkaoui, K., Murtagh, M. E., Kelly, P. V., Crean, G. M., Cassette, S., Delage, S. L. and Bland, S. W. (2002) 'Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer', Journal of Applied Physics, 92(5), pp. 2803-2806.
Copyright
© 2002 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Cherkaoui, K., Murtagh, M. E., Kelly, P. V., Crean, G. M., Cassette, S., Delage, S. L. and Bland, S. W. (2002) 'Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer', Journal of Applied Physics, 92(5), pp. 2803-2806 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1500417