Gate-controlled heat generation in ZnO nanowire FETs

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dc.contributor.author Pescaglini, Andrea
dc.contributor.author Biswas, Subhajit
dc.contributor.author Cammi, Davide
dc.contributor.author Ronning, Carsten
dc.contributor.author Holmes, Justin D.
dc.contributor.author Iacopino, Daniela
dc.date.accessioned 2017-07-14T14:43:10Z
dc.date.available 2017-07-14T14:43:10Z
dc.date.issued 2017-05-02
dc.identifier.citation Pescaglini, A., Biswas, S., Cammi, D., Ronning, C., Holmes, J. D. and Iacopino, D. (2017) 'Gate-controlled heat generation in ZnO nanowire FETs', Physical Chemistry Chemical Physics, 19(21), pp. 14042-14047. doi: 10.1039/C7CP01356F en
dc.identifier.volume 19 en
dc.identifier.issued 21 en
dc.identifier.startpage 14042 en
dc.identifier.endpage 14047 en
dc.identifier.issn 1463-9076
dc.identifier.issn 1463-9084
dc.identifier.uri http://hdl.handle.net/10468/4242
dc.identifier.doi 10.1039/C7CP01356F
dc.description.abstract Nanoscale heating production using nanowires has been shown to be particularly attractive for a number of applications including nanostructure growth, localized doping, transparent heating and sensing. However, all proof-of-concept devices proposed so far relied on the use of highly conductive nanomaterials, typically metals or highly doped semiconductors. In this article, we demonstrate a novel nanoheater architecture based on a single semiconductor nanowire field-effect transistor (NW-FET). Nominally undoped ZnO nanowires were incorporated into three-terminal devices whereby control of the nanowire temperature at a given source-drain bias was achieved by additional charge carriers capacitatively induced via the third gate electrode. Joule-heating selective ablation of poly(methyl methacrylate) deposited on ZnO nanowires was shown, demonstrating the ability of the proposed NW-FET configuration to enhance by more than one order of magnitude the temperature of a ZnO nanowire, compared to traditional two-terminal configurations. These findings demonstrate the potential of field-effect architectures to improve Joule heating power in nanowires, thus vastly expanding the range of suitable materials and applications for nanowire-based nanoheaters. en
dc.description.sponsorship Science Foundation Ireland (Grant: 14/IA/2513) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Royal Society of Chemistry
dc.rights © Royal Society of Chemistry 2017. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Physical Chemistry Chemical Physics. To access the final edited and published work see http://dx.doi.org/10.1039/C7CP01356F en
dc.subject Nanoscale en
dc.subject Nanowires en
dc.subject Nanomaterials en
dc.subject Semiconductors en
dc.subject Nanowire-based nanoheaters en
dc.title Gate-controlled heat generation in ZnO nanowire FETs en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication at the request of the publisher. en
dc.check.date 2018-05-02
dc.date.updated 2017-07-13T13:44:59Z
dc.description.version Accepted Version en
dc.internal.rssid 402759567
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder European Commission en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Physical Chemistry Chemical Physics en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.internal.IRISemailaddress daniela.iacopino@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/265073/EU/Semiconductor nanowires: from fundamental physics to device applications/NANOWIRING en


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