Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk

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dc.contributor.author Lebedev, D. V.
dc.contributor.author Kulagina, M. M.
dc.contributor.author Troshkov, S. I.
dc.contributor.author Vlasov, A. S.
dc.contributor.author Davydov, V. Y.
dc.contributor.author Smirnov, A. N.
dc.contributor.author Bogdanov, A. A.
dc.contributor.author Merz, J. L.
dc.contributor.author Kapaldo, J.
dc.contributor.author Gocalińska, Agnieszka M.
dc.contributor.author Juska, Gediminas
dc.contributor.author Moroni, Stefano T.
dc.contributor.author Pelucchi, Emanuele
dc.contributor.author Barettin, D.
dc.contributor.author Rouvimov, S.
dc.contributor.author Mintairov, A. M.
dc.date.accessioned 2017-07-25T14:16:22Z
dc.date.available 2017-07-25T14:16:22Z
dc.date.issued 2017-03-20
dc.identifier.citation Lebedev, D. V., Kulagina, M. M., Troshkov, S. I., Vlasov, A. S., Davydov, V. Y., Smirnov, A. N., Bogdanov, A. A., Merz, J. L., Kapaldo, J., Gocalinska, A., Juska, G., Moroni, S. T., Pelucchi, E., Barettin, D., Rouvimov, S. and Mintairov, A. M. (2017) 'Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk', Applied Physics Letters, 110(12), pp. 121101. doi: 10.1063/1.4979029 en
dc.identifier.volume 110
dc.identifier.issued 12
dc.identifier.startpage 1
dc.identifier.endpage 5
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4249
dc.identifier.doi 10.1063/1.4979029
dc.description.abstract Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs have the nano-pan-cake shape with the height of similar to 2 nm, the lateral size of 20-50 nm, and the density of similar to 5-10(9) cm(-2). Their emission observed at similar to 940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character, indicating In-As intermixing as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having the diameter of similar to 3.2 lm and providing a free spectral range of similar to 27 nm and quality factors up to Q similar to 13 000. Threshold of similar to 50 W/cm(2Y) and spontaneous emission coupling coefficient of similar to 0.2 were measured for this MD-QD system. Published by AIP Publishing. en
dc.description.sponsorship Science Foundation Ireland (Grant Nos. 12/RC/2276, 10/IN.1/I3000); Ministry of Education and Science of the Russian Federation (Contract No. 14.Z50.31.0021); Russian Foundation for Basic Research (RFBR (17-02-01331); Grant of the President of Russian Federation (MK-6462.2016.2)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4979029
dc.rights © 2017, The Authors, Published by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Lebedev, D. V., Kulagina, M. M., Troshkov, S. I., Vlasov, A. S., Davydov, V. Y., Smirnov, A. N., Bogdanov, A. A., Merz, J. L., Kapaldo, J., Gocalinska, A., Juska, G., Moroni, S. T., Pelucchi, E., Barettin, D., Rouvimov, S. and Mintairov, A. M. (2017) 'Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk', Applied Physics Letters, 110(12), pp. 121101, and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4979029 en
dc.subject Whispering-gallery modes en
dc.subject Lasers en
dc.subject Emission en
dc.subject Microcavity en
dc.subject Boxes en
dc.subject Aluminium compounds en
dc.subject Excitons en
dc.subject III-V semiconductors en
dc.subject Indium compounds en
dc.subject Microcavity lasers en
dc.subject Microdisc lasers en
dc.subject Photoluminescence en
dc.subject Q-factor en
dc.subject Quantum dot lasers en
dc.subject Semiconductor quantum dots en
dc.subject Spontaneous emission en
dc.subject Transmission electron microscopy en
dc.subject Whispering gallery mode en
dc.title Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Agnieszka Gocalińska, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000, Email: agnieszka.gocalinska@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication at the request of the publisher en
dc.check.date 2018-03-20
dc.description.version Published Version en
dc.internal.wokid WOS:000397872000001
dc.contributor.funder Ministry of Education and Science of the Russian Federation
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Mediterranean Institute of Fundamental Physics
dc.contributor.funder Russian Foundation for Basic Research
dc.contributor.funder Seventh Framework Programme
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress agnieszka.gocalinska@tyndall.ie en
dc.identifier.articleid 121101
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/612600/EU/Light-Matter Coupling in composite Nano-Structures/LIMACONA


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