Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

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dc.contributor.author Gauthier, J. P.
dc.contributor.author Robert, Cedric
dc.contributor.author Almosni, S.
dc.contributor.author Leger, Y.
dc.contributor.author Perrin, M.
dc.contributor.author Even, J.
dc.contributor.author Balocchi, A.
dc.contributor.author Carrere, H.
dc.contributor.author Marie, X.
dc.contributor.author Cornet, C.
dc.contributor.author Durand, O.
dc.date.accessioned 2017-07-25T14:16:23Z
dc.date.available 2017-07-25T14:16:23Z
dc.date.issued 2014
dc.identifier.citation Gauthier, J.-P., Robert, C., Almosni, S., Léger, Y., Perrin, M., Even, J., Balocchi, A., Carrère, H., Marie, X., Cornet, C. and Durand, O. (2014) 'Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots', Applied Physics Letters, 105(24), pp. 243111. doi: 10.1063/1.4904939 en
dc.identifier.volume 105
dc.identifier.issued 24
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4254
dc.identifier.doi 10.1063/1.4904939
dc.description.abstract We report on the structural and optical properties of (In,Ga) AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In, Ga) As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840 nm. These results reveal the potential of (In, Ga) AsN as an efficient active medium monolithically integrated on Si for laser applications. (C) 2014 AIP Publishing LLC. en
dc.description.sponsorship Region Bretagne (PONANT Project including FEDER funds); Agence Nationale de la Recherche (OPTOSI ANR (12-BS03-002-02)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4904939
dc.rights © 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gauthier, J.-P., Robert, C., Almosni, S., Léger, Y., Perrin, M., Even, J., Balocchi, A., Carrère, H., Marie, X., Cornet, C. and Durand, O. (2014) 'Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots', Applied Physics Letters, 105(24), pp. 243111 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4906106 en
dc.subject Quantum dots en
dc.subject III-V semiconductors en
dc.subject Photoluminescence en
dc.subject Activation energies en
dc.subject Conduction bands en
dc.title Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Cedric Robert, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email:cedric.robert@ucc.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000346643600067
dc.contributor.funder Conseil Régional de Bretagne
dc.contributor.funder Agence Nationale de la Recherche
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.identifier.articleid 243111


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