Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys

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dc.contributor.author Schulz, Stefan
dc.contributor.author Caro, Miguel A.
dc.contributor.author O'Reilly, Eoin P.
dc.date.accessioned 2017-07-25T14:16:23Z
dc.date.available 2017-07-25T14:16:23Z
dc.date.issued 2014
dc.identifier.citation Schulz, S., Caro, M. A. and O'Reilly, E. P. (2014) 'Impact of cation-based localized electronic states on the conduction and valence band structure of Al1−xInxN alloys', Applied Physics Letters, 104(17), pp. 172102. doi: 10.1063/1.4872317 en
dc.identifier.volume 104
dc.identifier.issued 17
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4256
dc.identifier.doi 10.1063/1.4872317
dc.description.abstract We demonstrate that cation-related localized states strongly perturb the band structure of Al1-xInxN leading to a strong band gap bowing at low In content. Our first-principles calculations show that In-related localized states are formed both in the conduction and the valence band in Al1-xInxN for low In composition, x, and that these localized states dominate the evolution of the band structure with increasing x. Therefore, the commonly used assumption of a single composition-independent bowing parameter breaks down when describing the evolution both of the conduction and of the valence band edge in Al1-xInxN. (C) 2014 AIP Publishing LLC. en
dc.description.sponsorship Science Foundation Ireland (10/IN.1/I2994) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4872317
dc.rights © 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Schulz, S., Caro, M. A. and O'Reilly, E. P. (2014) 'Impact of cation-based localized electronic states on the conduction and valence band structure of Al1−xInxN alloys', Applied Physics Letters, 104(17), pp. 172102 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4899123 en
dc.subject Semiconductors en
dc.subject Nitrogen en
dc.subject Offsets en
dc.subject Parameters en
dc.subject Energy en
dc.subject Aluminium en
dc.subject Localized states en
dc.subject III-V semiconductors en
dc.subject Band gap en
dc.subject Band structure en
dc.title Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Stefan Schulz, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-234-6175, Email: stefan.schulz@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000336142500034
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Seventh Framework Programme
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress stefan.schulz@tyndall.ie en
dc.identifier.articleid 172102
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::NMP/280587/EU/AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications/ALIGHT


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