Unusual nanostructures of "lattice matched" InP on AlInAs
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Date
2014
Authors
GocaliĆska, Agnieszka M.
Manganaro, Marina
Juska, Gediminas
Dimastrodonato, Valeria
Thomas, Kevin K.
Joyce, Bruce A.
Zhang, Jing
Vvedensky, Dimitri D.
Pelucchi, Emanuele
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Publisher
AIP Publishing
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Abstract
We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e. g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase separation/alloying-induced strain and that the preferred aggregation of adatom species on the substrate surface and reduced wettability of InP on AlInAs surfaces might be the cause of the unusual (step) organization and morphology. (C) 2014 AIP Publishing LLC.
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Keywords
Molecular-beam epitaxy , Spinodal decomposition , Growth , III-V semiconductors , Epitaxy , Quantum dots , Surface morphology , Etching
Citation
Gocalinska, A., Manganaro, M., Juska, G., Dimastrodonato, V., Thomas, K., Joyce, B. A., Zhang, J., Vvedensky, D. D. and Pelucchi, E. (2014) 'Unusual nanostructures of âlattice matchedâ InP on AlInAs', Applied Physics Letters, 104(14), pp. 141606. doi: 10.1063/1.4871086
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© 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gocalinska, A., Manganaro, M., Juska, G., Dimastrodonato, V., Thomas, K., Joyce, B. A., Zhang, J., Vvedensky, D. D. and Pelucchi, E. (2014) 'Unusual nanostructures of âlattice matchedâ InP on AlInAs', Applied Physics Letters, 104(14), pp. 141606 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4871086