Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1-x/GaAs quantum wells
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Date
2014
Authors
Usman, Muhammad
O'Reilly, Eoin P.
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Volume Title
Publisher
AIP Publishing
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Abstract
Large-supercell tight-binding calculations are presented for GaBixAs1-x/GaAs single quantum wells (QWs) with Bi fractions x of 3.125% and 12.5%. Our results highlight significant distortion of the valence band states due to the alloy disorder. A large full-width-half-maximum (FWHM) is estimated in the ground state interband transition energy (approximate to 33 meV) at 3.125% Bi, consistent with recent photovoltage measurements for similar Bi compositions. Additionally, the alloy disorder effects are predicted to become more pronounced as the QW width is increased. However, they are less strong at the higher Bi composition (12.5%) required for the design of temperature-stable lasers, with a calculated FWHM of approximate to 23.5 meV at x = 12.5%. (C) 2014 AIP Publishing LLC.
Description
Keywords
Quantum wells , Valence bands , Probability theory , Conduction bands , Band gap
Citation
Usman, M. and O'Reilly, E. P. (2014) 'Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1−x/GaAs quantum wells', Applied Physics Letters, 104(7), pp. 071103. doi: 10.1063/1.4865827
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© 2014 AIP Publishing LLC.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Usman, M. and O'Reilly, E. P. (2014) 'Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1−x/GaAs quantum wells', Applied Physics Letters, 104(7), pp. 071103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4865827