Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation

Show simple item record

dc.contributor.author Kozlowski, Grzegorz
dc.contributor.author Schulz, Stefan
dc.contributor.author Corbett, Brian M.
dc.date.accessioned 2017-07-25T14:16:23Z
dc.date.available 2017-07-25T14:16:23Z
dc.date.issued 2014
dc.identifier.citation Kozlowski, G., Schulz, S. and Corbett, B. (2014) 'Polarization matching design of InGaN-based semi-polar quantum wells—A case study of (112¯2) orientation', Applied Physics Letters, 104(5), pp. 051128. doi: 10.1063/1.4864478 en
dc.identifier.volume 104
dc.identifier.issued 5
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4261
dc.identifier.doi 10.1063/1.4864478
dc.description.abstract We present a theoretical study of the polarization engineering in semi-polar III-nitrides heterostructures. As a case study, we investigate the influence of GaN, AlGaN, and AlInN barrier material on the performance of semi-polar (11 (2) over bar2) InGaN-based quantum wells (QWs) for blue (450 nm) and yellow (560 nm) emission. We show that the magnitude of the total built-in electric field across the QW can be controlled by the barrier material. Our results indicate that AlInN is a promising candidate to achieve (i) reduced wavelength shifts with increasing currents and (ii) strongly increased electron-hole wave function overlap, important for reduced optical recombination times. (C) 2014 AIP Publishing LLC. en
dc.description.sponsorship Science Foundation Ireland (10/IN.1/I2994) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4864478
dc.rights © 2014 AIP Publishing LLC.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Kozlowski, G., Schulz, S. and Corbett, B. (2014) 'Polarization matching design of InGaN-based semi-polar quantum wells—A case study of (112¯2) orientation', Applied Physics Letters, 104(5), pp. 051128 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4864478 en
dc.subject Quantum wells en
dc.subject Light emitting diodes en
dc.subject Polarization en
dc.subject Wave functions en
dc.subject Piezoelectric fields en
dc.title Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Grzegorz Kozlowski, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: grzegorz.kozlowski@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000331644100028
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Seventh Framework Programme
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress grzegorz.kozlowski@tyndall.ie en
dc.identifier.articleid 51128
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::NMP/280587/EU/AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications/ALIGHT


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement