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Femtosecond pulse generation in passively mode locked InAs quantum dot lasers
Finch, Patrick; Blood, P.; Smowton, P. M.; Sobiesierski, A.; Gwilliam, R. M.; O'Driscoll, Ian
Date:
2013
Copyright:
© 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Finch, P., Blood, P., Smowton, P. M., Sobiesierski, A., Gwilliam, R. M. and O'Driscoll, I. (2013) 'Femtosecond pulse generation in passively mode locked InAs quantum dot lasers', Applied Physics Letters, 103(13), pp. 131109 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4822433
Citation:
Finch, P., Blood, P., Smowton, P. M., Sobiesierski, A., Gwilliam, R. M. and O'Driscoll, I. (2013) 'Femtosecond pulse generation in passively mode locked InAs quantum dot lasers', Applied Physics Letters, 103(13), pp. 131109. doi: 10.1063/1.4822433
Abstract:
Optical pulse durations of an InAs two-section passively mode-locked quantum dot laser with a proton bombarded absorber section reduce from 8.4 ps at 250K to 290 fs at 20 K, a factor of 29, with a corresponding increase in optical bandwidth. Rate equation analysis of gain and emission spectra using rate equations suggests this is due to the very low emission rate of carriers to the wetting layer in the low temperature, random population regime which enables dots across the whole inhomogeneous distribution to act as independent oscillators. (C) 2013 AIP Publishing LLC.
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