Femtosecond pulse generation in passively mode locked InAs quantum dot lasers
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Published Version
Date
2013
Authors
Finch, Patrick
Blood, P.
Smowton, P. M.
Sobiesierski, A.
Gwilliam, R. M.
O'Driscoll, Ian
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Optical pulse durations of an InAs two-section passively mode-locked quantum dot laser with a proton bombarded absorber section reduce from 8.4 ps at 250K to 290 fs at 20 K, a factor of 29, with a corresponding increase in optical bandwidth. Rate equation analysis of gain and emission spectra using rate equations suggests this is due to the very low emission rate of carriers to the wetting layer in the low temperature, random population regime which enables dots across the whole inhomogeneous distribution to act as independent oscillators. (C) 2013 AIP Publishing LLC.
Description
Keywords
Random-population , Gain , Temperature , Technology , Systems , Wetting , Emission spectra , Ground states , Optical pulse generation , Quantum dot lasers
Citation
Finch, P., Blood, P., Smowton, P. M., Sobiesierski, A., Gwilliam, R. M. and O'Driscoll, I. (2013) 'Femtosecond pulse generation in passively mode locked InAs quantum dot lasers', Applied Physics Letters, 103(13), pp. 131109. doi: 10.1063/1.4822433
Copyright
© 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Finch, P., Blood, P., Smowton, P. M., Sobiesierski, A., Gwilliam, R. M. and O'Driscoll, I. (2013) 'Femtosecond pulse generation in passively mode locked InAs quantum dot lasers', Applied Physics Letters, 103(13), pp. 131109 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4822433