Fabrication of p-type porous GaN on silicon and epitaxial GaN

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dc.contributor.author Bilousov, Oleksandr V.
dc.contributor.author Geaney, Hugh
dc.contributor.author Carvajal, Joan J.
dc.contributor.author Zubialevich, Vitaly Z.
dc.contributor.author Parbrook, Peter J.
dc.contributor.author Giguere, A.
dc.contributor.author Drouin, Dominique
dc.contributor.author Diaz, Francesc
dc.contributor.author Aguilo, Magdalena
dc.contributor.author O'Dwyer, Colm
dc.date.accessioned 2017-07-25T14:16:24Z
dc.date.available 2017-07-25T14:16:24Z
dc.date.issued 2013
dc.identifier.citation Bilousov, O. V., Geaney, H., Carvajal, J. J., Zubialevich, V. Z., Parbrook, P. J., Giguère, A., Drouin, D., Díaz, F., Aguiló, M. and O'Dwyer, C. (2013) 'Fabrication of p-type porous GaN on silicon and epitaxial GaN', Applied Physics Letters, 103(11), pp. 112103. doi: 10.1063/1.4821191 en
dc.identifier.volume 103
dc.identifier.issued 11
dc.identifier.startpage 1
dc.identifier.endpage 5
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4267
dc.identifier.doi 10.1063/1.4821191
dc.description.abstract Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurements confirm a p-n junction commensurate with a doping density of similar to 10(18) cm(-3). Photoluminescence and cathodoluminescence confirm emission from Mg-acceptors in porous p-type GaN. (C) 2013 AIP Publishing LLC. en
dc.description.sponsorship Spanish Government (Projects No. MAT2011-29255-C02-02, TEC2010-21574-C02-02); Generalitat de Catalunya (Catalan Authority (Project No. 2009SGR235)); University College Cork (UCC Strategic Research Fund); Science Foundation Ireland (Award No. 07.SK.B1232a-STTF11); Irish Research Council (New Foundations Award 2012) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4821191
dc.rights © 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Bilousov, O. V., Geaney, H., Carvajal, J. J., Zubialevich, V. Z., Parbrook, P. J., Giguère, A., Drouin, D., Díaz, F., Aguiló, M. and O'Dwyer, C. (2013) 'Fabrication of p-type porous GaN on silicon and epitaxial GaN', Applied Physics Letters, 103(11), pp. 112103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4821191 en
dc.subject Chemical-vapor-deposition en
dc.subject Mg-doped gan; yellow luminescence en
dc.subject Gallium nitride en
dc.subject Photoluminescence en
dc.subject Particles en
dc.subject Nanowires en
dc.subject Vacancies en
dc.subject Growth en
dc.subject Films en
dc.subject III-V semiconductors en
dc.subject Epitaxy en
dc.subject Gold en
dc.subject Magnesium en
dc.subject Doping en
dc.title Fabrication of p-type porous GaN on silicon and epitaxial GaN en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland +353-21-490-3000, Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.rssid 231550490
dc.internal.wokid WOS:000324495000036
dc.contributor.funder Spanish Government
dc.contributor.funder Generalitat de Catalunya
dc.contributor.funder University College Cork
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Irish Research Council
dc.contributor.funder Seventh Framework Programme
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en
dc.identifier.articleid 112103
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::SPA/263044/EU/Small debris removal by laser illumination and complementary technologie/CLEANSPACE


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