Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

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Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

Bolshakov, Pavel; Zhao, Peng; Azcatl, Angelica; Hurley, Paul K.; Wallace, Robert M.; Young, Chadwin D.
Date: 2017-07-21
Copyright: © 2017, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 111, 032110 (2017) and may be found at http://aip.scitation.org/doi/pdf/10.1063/1.4995242
Full text restriction information: Access to this article is restricted until 12 months after publication at the request of the publisher.
Restriction lift date: 2018-07-21
Citation: Bolshakov, P., Zhao, P., Azcatl, A., Hurley, P. K., Wallace, R. M. and Young, C. D. (2017) 'Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer', Applied Physics Letters, 111(3), pp. 032110. doi:10.1063/1.4995242
Published Version: 10.1063/1.4995242

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