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Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer
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Date
2017-07-21
Authors
Bolshakov, Pavel
Zhao, Peng
Azcatl, Angelica
Hurley, Paul K.
Wallace, Robert M.
Young, Chadwin D.
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Volume Title
Publisher
AIP Publishing
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Abstract
Description
Keywords
Alumina , Annealing , Carrier mobility , High-k dielectric thin films , Molybdenum compounds , MOSFET , Bipolar transistors , Chemical compounds , Inorganic compounds , Dielectrics , Chemical bonds
Citation
Bolshakov, P., Zhao, P., Azcatl, A., Hurley, P. K., Wallace, R. M. and Young, C. D. (2017) 'Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer', Applied Physics Letters, 111(3), pp. 032110. doi:10.1063/1.4995242
Copyright
© 2017, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 111, 032110 (2017) and may be found at http://aip.scitation.org/doi/pdf/10.1063/1.4995242