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Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer
Hurley, Paul K.
Wallace, Robert M.
Young, Chadwin D.
Alumina , Annealing , Carrier mobility , High-k dielectric thin films , Molybdenum compounds , MOSFET , Bipolar transistors , Chemical compounds , Inorganic compounds , Dielectrics , Chemical bonds
Bolshakov, P., Zhao, P., Azcatl, A., Hurley, P. K., Wallace, R. M. and Young, C. D. (2017) 'Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer', Applied Physics Letters, 111(3), pp. 032110. doi:10.1063/1.4995242
© 2017, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 111, 032110 (2017) and may be found at http://aip.scitation.org/doi/pdf/10.1063/1.4995242