Full text restriction information:Access to this article is restricted until 12 months after publication at the request of the publisher.
Restriction lift date:2018-07-21
Citation:Bolshakov, P., Zhao, P., Azcatl, A., Hurley, P. K., Wallace, R. M. and Young, C. D. (2017) 'Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer', Applied Physics Letters, 111(3), pp. 032110. doi:10.1063/1.4995242
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