The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures
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Published Version
Date
2013
Authors
Smith, Matthew D.
Sadler, Thomas C.
Li, Haoning
Zubialevich, Vitaly Z.
Parbrook, Peter J.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
The effects of AlN interlayer growth conditions on InAlN/AlN/GaN heterostructures are investigated, with interlayers imaged as they would appear prior to InAlN barrier layer deposition using surface atomic force microscopy scans undertaken immediately after growth. Surface morphologies and subsequent heterostructure conductivity suggested minimum on-resistance can be achieved by balancing the underlying GaN channel decomposition and interfacial roughening when deciding AlN interlayer growth parameters on a sapphire substrate of a given miscut. (C) 2013 AIP Publishing LLC. (DOI: 10.1063/1.4818645)
Description
Keywords
III-V semiconductors , Sapphire , Heterojunctions , MODFETs , Atomic force microscopy
Citation
Smith, M. D., Sadler, T. C., Li, H., Zubialevich, V. Z. and Parbrook, P. J. (2013) 'The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures', Applied Physics Letters, 103(8), pp. 081602. doi: 10.1063/1.4818645
Copyright
© 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Smith, M. D., Sadler, T. C., Li, H., Zubialevich, V. Z. and Parbrook, P. J. (2013) 'The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures', Applied Physics Letters, 103(8), pp. 081602 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4818645