The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures

The CORA service is operating as normal. For general information on remote access to UCC Library services and collections during the University closure, please visit the main library website at https://libguides.ucc.ie

Show simple item record

dc.contributor.author Smith, Matthew D.
dc.contributor.author Sadler, Thomas C.
dc.contributor.author Li, Haoning
dc.contributor.author Zubialevich, Vitaly Z.
dc.contributor.author Parbrook, Peter J.
dc.date.accessioned 2017-07-28T09:23:22Z
dc.date.available 2017-07-28T09:23:22Z
dc.date.issued 2013
dc.identifier.citation Smith, M. D., Sadler, T. C., Li, H., Zubialevich, V. Z. and Parbrook, P. J. (2013) 'The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures', Applied Physics Letters, 103(8), pp. 081602. doi: 10.1063/1.4818645 en
dc.identifier.volume 103
dc.identifier.issued 8
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4280
dc.identifier.doi 10.1063/1.4818645
dc.description.abstract The effects of AlN interlayer growth conditions on InAlN/AlN/GaN heterostructures are investigated, with interlayers imaged as they would appear prior to InAlN barrier layer deposition using surface atomic force microscopy scans undertaken immediately after growth. Surface morphologies and subsequent heterostructure conductivity suggested minimum on-resistance can be achieved by balancing the underlying GaN channel decomposition and interfacial roughening when deciding AlN interlayer growth parameters on a sapphire substrate of a given miscut. (C) 2013 AIP Publishing LLC. (DOI: 10.1063/1.4818645) en
dc.description.sponsorship Irish Research Council (IRC) Embark Initiative; IRC EMPOWER initiative; Science Foundation Ireland; European Regional Development Fund “INSPIRE” en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4818645
dc.rights © 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Smith, M. D., Sadler, T. C., Li, H., Zubialevich, V. Z. and Parbrook, P. J. (2013) 'The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures', Applied Physics Letters, 103(8), pp. 081602 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4818645 en
dc.subject III-V semiconductors en
dc.subject Sapphire en
dc.subject Heterojunctions en
dc.subject MODFETs en
dc.subject Atomic force microscopy en
dc.title The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Peter Parbrook,Tyndall National Institute, University College Cork, Cork, Ireland +353 (0)21 2346365, Email: peter.parbrook@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000323788100009
dc.contributor.funder Irish Research Council for Science, Engineering and Technology
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder European Commission
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress peter.parbrook@tyndall.ie en
dc.identifier.articleid 81602


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement