Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy

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dc.contributor.author Dimastrodonato, Valeria
dc.contributor.author Pelucchi, Emanuele
dc.contributor.author Zestanakis, Panagiotis A.
dc.contributor.author Vvedensky, Dimitri D.
dc.date.accessioned 2017-07-28T09:23:23Z
dc.date.available 2017-07-28T09:23:23Z
dc.date.issued 2013
dc.identifier.citation Dimastrodonato, V., Pelucchi, E., Zestanakis, P. A. and Vvedensky, D. D. (2013) 'Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy', Applied Physics Letters, 103(4), pp. 042103. doi: 10.1063/1.4816415 en
dc.identifier.volume 103
dc.identifier.issued 4
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4282
dc.identifier.doi 10.1063/1.4816415
dc.description.abstract We present a theoretical model of the formation of self-limited (Al) GaAs quantum wires within V-grooves on GaAs(001) substrates during metalorganic vapor-phase epitaxy. We identify the facet-dependent rates of the kinetic processes responsible for the formation of the self-limiting profile, which is accompanied by Ga segregation along the axis perpendicular to the bottom of the original template, and analyze their interplay with the facet geometry in the transient regime. A reduced model is adopted for the evolution of the patterned profile, as determined by the angle between the different crystallographic planes as a function of the growth conditions. Our results provide a comprehensive phenomenological understanding of the self-ordering mechanism on patterned surfaces which can be harnessed for designing the quantum optical properties of low-dimensional systems. (C) 2013 AIP Publishing LLC. en
dc.description.sponsorship Science Foundation Ireland (10/IN.1/I3000) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4816415
dc.rights © 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Dimastrodonato, V., Pelucchi, E., Zestanakis, P. A. and Vvedensky, D. D. (2013) 'Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy', Applied Physics Letters, 103(4), pp. 042103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4816415 en
dc.subject Molecular-beam epitaxy en
dc.subject Dot arrays en
dc.subject Growth en
dc.subject Heterostructures en
dc.title Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Emanuele Pelucchi, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000, Email: emanuele.pelucchi@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000322406600042
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress emanuele.pelucchi@tyndall.ie en
dc.identifier.articleid 42103


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