Carrier localization and in-situ annealing effect on quaternary Ga1-xInxAsySb1-y/GaAs quantum wells grown by Sb pre-deposition

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dc.contributor.author Thoma, Jiri
dc.contributor.author Liang, Baolai
dc.contributor.author Lewis, Liam
dc.contributor.author Hegarty, Stephen P.
dc.contributor.author Huyet, Guillaume
dc.contributor.author Huffaker, Diana L.
dc.date.accessioned 2017-07-28T09:23:23Z
dc.date.available 2017-07-28T09:23:23Z
dc.date.issued 2013
dc.identifier.citation Thoma, J., Liang, B., Lewis, L., Hegarty, S. P., Huyet, G. and Huffaker, D. L. (2013) 'Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition', Applied Physics Letters, 102(11), pp. 113101. doi: 10.1063/1.4795866 en
dc.identifier.volume 102
dc.identifier.issued 11
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4285
dc.identifier.doi 10.1063/1.4795866
dc.description.abstract Using temperature-dependent photoluminescence spectroscopy, we have investigated and compared intrinsic InGaAs, intrinsic GaInAsSb, and p-i-n junction GaInAsSb quantum wells (QWs) embedded in GaAs barriers. Strong carrier localization inside the intrinsic GaInAsSb/GaAs QW has been observed together with its decrease inside the p-i-n sample. This is attributed to the effect of an in-situ annealing during the top p-doped AlGaAs layer growth at an elevated temperature of 580 degrees C, leading to Sb-atom diffusion and even atomic redistribution. High-resolution X-ray diffraction measurements and the decrease of both maximum localization energy and full delocalization temperature in the p-i-n QW sample further corroborated this conclusion. (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4795866) en
dc.description.sponsorship Science Foundation Ireland (SFI) Strategic Research Cluster, PiFAS (07/SRC/I1173); United States Department of Defense (NSSEFF N00244-09-1-0091) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4795866
dc.rights © 2013 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Thoma, J., Liang, B., Lewis, L., Hegarty, S. P., Huyet, G. and Huffaker, D. L. (2013) 'Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition', Applied Physics Letters, 102(11), pp. 113101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4795866 en
dc.subject Molecular-beam epitaxy en
dc.subject Optical-properties en
dc.subject Threshold-current en
dc.subject Band-gap en
dc.subject Lasers en
dc.subject Gainnas en
dc.subject Performance en
dc.subject Surfactant en
dc.subject Quantum wells en
dc.subject III-V semiconductors en
dc.subject Photoluminescence en
dc.subject Annealing en
dc.subject Cladding en
dc.title Carrier localization and in-situ annealing effect on quaternary Ga1-xInxAsySb1-y/GaAs quantum wells grown by Sb pre-deposition en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Liam Lewis, Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland +353 (0)21 2346242, E-mail: liam.lewis@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000316544900076
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder U.S. Department of Defense
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress liam.lewis@tyndall.ie en
dc.identifier.articleid 113101


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