Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices

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Date
2013
Authors
Thoma, Jiri
Liang, Baolai
Reyner, Charles
Ochalski, Tomasz J.
Williams, David P.
Hegarty, Stephen P.
Huffaker, Diana L.
Huyet, Guillaume
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AIP Publishing
Published Version
10.1063/1.4775371
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Abstract
The electro-optic properties of strained GaInAsSb/GaAs quantum wells (QWs) are investigated. A single QW p-i-n sample was grown by molecular beam epitaxy with antimony (Sb) pre-deposition technique. We numerically predict and experimentally verify a strong quantum confined Stark shift of 40 nm. We also predict a fast absorption recovery times crucial of high-speed optoelectronic devices mainly due to strong electron tunneling and thermionic emission. Predicted recovery times are corroborated by bias and temperature dependent time-resolved photoluminescence measurements indicating (<= 30 ps) recovery times. This makes GaInAsSb QW an attractive material particularly for electroabsorption modulators and saturable absorbers. (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4775371)
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Keywords
Molecular-beam epitaxy , Optical-properties , Threshold-current , Sb surfactant , Lasers , Gainnas , Recombination , Quantum wells , III-V semiconductors , Electric fields , Photoluminescence , Tunneling
Citation
Thoma, J., Liang, B., Reyner, C., Ochalski, T., Williams, D., Hegarty, S. P., Huffaker, D. and Huyet, G. (2013) 'Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices', Applied Physics Letters, 102(1), pp. 013120. doi: 10.1063/1.4775371
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http://aip.scitation.org/doi/abs/10.1063/1.4775371
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https://hdl.handle.net/10468/4291
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Tyndall National Institute - Journal Articles
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© 2013 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Thoma, J., Liang, B., Reyner, C., Ochalski, T., Williams, D., Hegarty, S. P., Huffaker, D. and Huyet, G. (2013) 'Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices', Applied Physics Letters, 102(1), pp. 013120 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4775371