A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures

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A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures

Walsh, Lee A.; Hughes, Greg; Hurley, Paul K.; Lin, Jun; Woicik, Joseph C.
Date: 2012
Copyright: © 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Walsh, L. A., Hughes, G., Hurley, P. K., Lin, J. and Woicik, J. C. (2012) 'A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures', Applied Physics Letters, 101(24), pp. 241602 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4770380
Related: http://aip.scitation.org/doi/abs/10.1063/1.4770380
Citation: Walsh, L. A., Hughes, G., Hurley, P. K., Lin, J. and Woicik, J. C. (2012) 'A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures', Applied Physics Letters, 101(24), pp. 241602. doi: 10.1063/1.4770380
Published Version: 10.1063/1.4770380

Abstract:

Combined hard x-ray photoelectron spectroscopy (HAXPES) and electrical characterisation measurements on identical Si based metal-oxide-semiconductor structures have been performed. The results obtained indicate that surface potential changes at the Si/SiO2 interface due to the presence of a thin Al or Ni gate layer can be detected with HAXPES. Changes in the Si/SiO2 band bending at zero gate voltage and the flat band voltage for the case of Al and Ni gate layers derived from the silicon core levels shifts observed in the HAXPES spectra are in agreement with values derived from capacitance-voltage measurements. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4770380)

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