Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots

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dc.contributor.author Schulz, Stefan
dc.contributor.author Caro, Miguel A.
dc.contributor.author O'Reilly, Eoin P.
dc.date.accessioned 2017-07-28T09:23:24Z
dc.date.available 2017-07-28T09:23:24Z
dc.date.issued 2012
dc.identifier.citation Schulz, S., Caro, M. A. and O'Reilly, E. P. (2012) 'Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots', Applied Physics Letters, 101(11), pp. 113107. doi: 10.1063/1.4752108 en
dc.identifier.volume 101
dc.identifier.issued 11
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4294
dc.identifier.doi 10.1063/1.4752108
dc.description.abstract We present a detailed analysis of the electrostatic built-in field, the electronic structure, and the optical properties of a-plane GaN/AlN quantum dots with an arrowhead-shaped geometry. This geometry is based on extensive experimental analysis given in the literature. Our results indicate that the spatial overlap of electron and hole ground state wave functions is significantly increased, compared to that of a c-plane system, when taking the experimentally suggested trapezoid-shaped dot base into account. This finding is in agreement with experimental data on the optical properties of a-plane GaN/AlN quantum dots. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4752108) en
dc.description.sponsorship Science Foundation Ireland (10/IN.1/I2994) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4752108
dc.rights © 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Schulz, S., Caro, M. A. and O'Reilly, E. P. (2012) 'Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots', Applied Physics Letters, 101(11), pp. 113107 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4752108 en
dc.subject Fields en
dc.subject Quantum dots en
dc.subject Wave functions en
dc.subject Optical properties en
dc.subject Ground states en
dc.subject Spatial analysis en
dc.title Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Stefan Schulz, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-234-6175, Email: stefan.schulz@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000309329300064
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress stefan.schulz@tyndall.ie en
dc.identifier.articleid 113107


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